# US 2010/0166033 A1 · Semiconductor light-emitting device

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- Number: US 2010/0166033 A1
- Document ID: US20100166033A1
- Status: Published application
- Kind: A1
- Application number: 12/347,392
- Filed: 2008-12-31
- Published: 2010-07-01
- Earliest claimed: 2008-12-31
- Assignees: Epistar Corporation
- Inventors: Ming-Ta CHIN; Kuo-Feng HUANG; Ping-Fei SHEN; Ching-Jen WANG; Shih-Pang CHANG
- Web page: https://patentgrep.com/patent/US20100166033A1

## CPC

- H01S 5/343: in AIIIBV compounds, e.g. AlGaAs-laser {, InP-based laser}
- B82Y 20/00: Nanooptics, e.g. quantum optics or photonic crystals
- H10H 20/812: within the light-emitting regions, e.g. having quantum confinement structures
- H01S 5/0216: {using an intermediate compound, e.g. a glue or solder}
- H01S 5/0217: {Removal of the substrate}
- H01S 5/309: {doping of barrier layers that confine charge carriers in the laser structure, e.g. the barriers in a quantum well structure (barriers in quantum wells per se H01S5/3407)}
- H01S 5/3407: {characterised by special barrier layers}
- H10H 20/824: comprising only Group III-V materials, e.g. GaP
- H01S: DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS

## Abstract

A semiconductor light-emitting device includes a substrate, a first cladding layer over the substrate, an active region on the first cladding layer, and a second cladding layer on the active region, wherein the active region includes a first type barrier layer that is doped and a second type barrier layer that is undoped, the first type barrier layer being closer to the first cladding layer than the second type barrier layer.

## Claims

### Claim 1

A semiconductor device, comprising:
a substrate;
a first cladding layer over said substrate;
an active region on said first cladding layer; and
a second cladding layer on said active region;
wherein said active region includes a first type barrier layer that is doped and a second type barrier layer that is undoped, said first type barrier layer being closer to said first cladding layer than said second type barrier layer.

### Claim 2 (depends on 1)

The semiconductor device of claim 1, further comprising a buffer layer positioned between said substrate and said first cladding layer.

### Claim 3 (depends on 1)

The semiconductor device of claim 1, wherein said active region has a multi-quantum-well (MQW) structure including a plurality of well-layer/barrier-layer pairs, wherein a well layer of each said well-layer/barrier-layer pair serves as an active layer in which carriers may recombine radiatively to generate photons.

### Claim 4 (depends on 3)

The semiconductor device of claim 3, wherein the barrier layer of each well-layer/barrier-layer pair is one of said first type barrier layers or one of said second type barrier layers, and a number of said first type barrier layers is equal to or smaller than one half of a total number of said first type and second type barrier layers.

### Claim 5 (depends on 3)

The semiconductor device of claim 3, wherein the barrier layer of each said well-layer/barrier-layer pair closer to said first cladding layer is one of said first type barrier layers and the barrier layer of each said well-layer/barrier-layer pair closer to said second cladding layer is one of said second type barrier layers.

### Claim 6 (depends on 3)

The semiconductor device of claim 3, wherein said active region is formed of one of (AlxGa1-x)yIn1-yP (0≦x≦1, 0≦y≦1), AlGaAs, or InGaP.

### Claim 7 (depends on 2)

The semiconductor device of claim 2, wherein said semiconductor substrate is an n-type GaAs substrate, said buffer layer is an n-type GaAs buffer layer, said first cladding layer is an n-type AlInP, AlGalnP, or AlGaAs cladding layer, said second cladding layer is a p-type AlInP, AlGaInP, or AlGaAs cladding layer, and said first type barrier layer is doped p-type.

### Claim 8 (depends on 7)

The semiconductor device of claim 7, wherein a thickness of said n-type cladding layer is greater than 1 μm.

### Claim 9 (depends on 7)

The semiconductor device of claim 7, wherein p-type impurities doped in said first type barrier layer and said second cladding layer are of one or more selected from a group of p-type doping elements capable of providing holes and including magnesium (Mg), zinc (Zn), beryllium (Be), and carbon (C).

### Claim 10 (depends on 9)

The semiconductor device of claim 9, wherein impurities doped in said first type barrier layer and in said second cladding layer are of respectively different elements.

### Claim 11 (depends on 7)

The semiconductor device of claim 7, wherein an impurity concentration in said first type barrier layer is in a range between 1×1016 cm−3 and 1×1020 cm−3.

### Claim 12 (depends on 7)

The semiconductor device of claim 7, further comprising a transition layer on said p-type cladding layer and a current spreading layer on said transition layer.

### Claim 13 (depends on 12)

The semiconductor device of claim 12, wherein said transition layer is a p-type InGaP layer, and said current spreading layer is a p-type GaP layer.

### Claim 14

A semiconductor device, comprising:
a substrate;
a first cladding layer over said substrate;
a multi-quantum-well (MQW) active region on said first cladding layer; and
a second cladding layer on said active region;
wherein said MQW active region includes a plurality of well-layer/barrier-layer pairs, a well layer of each said well-layer/barrier-layer pair serving as an active layer in which carriers may recombine radiatively to generate photons and a barrier layer of each said well-layer/barrier-layer pair being doped, and wherein said active region is formed of one of (AlxGa1-x)yIn1-yP (0≦x≦1, 0≦y≦1), AlGaAs, or InGaP.

### Claim 15

A semiconductor device, comprising:
a permanent substrate;
a bonding layer over said permanent substrate;
a second cladding layer over said bonding layer;
an active region on said second cladding layer; and
a first cladding layer on said active region;
wherein said active region includes a first type barrier layer that is doped and a second type barrier layer that is undoped, said first type barrier layer being closer to said first cladding layer than said second type barrier layer.

### Claim 16 (depends on 15)

The semiconductor device of claim 15, wherein said first cladding layer is an n-type AlInP, AlGaInP, or AlGaAs cladding layer, said second cladding layer is a p-type AlInP, AlGalnP, or AlGaAs cladding layer, and said first type barrier layer is doped p-type.

### Claim 17 (depends on 15)

The semiconductor device of claim 15, further comprising a current spreading layer on said bonding layer and a transition layer positioned between said current spreading layer and said second cladding layer.

### Claim 18 (depends on 17)

The semiconductor device of claim 17, wherein said current spreading layer is a p-type GaP layer and said transition layer is a p-type InGaP layer.

### Claim 19 (depends on 15)

The semiconductor device of claim 15, wherein said bonding layer is formed of one of transparent conductive oxide, semiconductor, organic material, or metal.