# US 2010/0165751 A1 · Data output device for semiconductor memory apparatus > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2010/0165751 A1 - Document ID: US20100165751A1 - Status: Published application - Kind: A1 - Application number: 12/494,377 - Filed: 2009-06-30 - Published: 2010-07-01 - Earliest claimed: 2008-12-31 - Assignees: Hynix Semiconductor Inc. - Inventors: Hong-Sok Choi - Web page: https://patentgrep.com/patent/US20100165751A1 ## CPC - G11C 7/1051: {Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits} - G11C 7/02: with means for avoiding parasitic signals - G11C 7/1057: {Data output buffers, e.g. comprising level conversion circuits, circuits for adapting load} - G11C 7/22: Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management - G11C 7/222: {Clock generating, synchronizing or distributing circuits within memory device} - G11C: STATIC STORES (semiconductor memory devices H10B) ## Abstract A data output device of a semiconductor memory apparatus includes detection means configured to detect a specified operation frequency range; pre-driving means configured to be inputted with signals; driving means configured to receive outputs of the pre-driving means and drive an output of data; and adjustment means configured to adjust a slew rate of the driving means under the control of an output signal of the detection means. ## Claims ### Claim 1 A data output device of a semiconductor memory apparatus, comprising: detection means configured to detect a specified operation frequency range; pre-driving means configured to be inputted with signals; driving means configured to receive outputs of the pre-driving means and drive an output of data; and adjustment means configured to adjust a slew rate of the driving means under the control of an output signal of the detection means. ### Claim 2 (depends on 1) The data output device of claim 1, wherein the adjustment means comprises: resistors connected between the pre-driving means and the driving means; and control switching units connected to both ends of the resistors to be controlled by the detection means. ### Claim 3 (depends on 1) The data output device of claim 1, wherein the detection means comprises: delay elements having delay amounts to detect the specified operation frequency range; and a signal generation unit configured to generate a signal on the basis of output values of the delay elements. ### Claim 4 (depends on 3) The data output device of claim 3, wherein the delay elements comprise: a first delay element having a delay amount greater than a time corresponding to the specified operation frequency range; and a second delay element having a delay amount less than the time corresponding to the specified operation frequency range. ### Claim 5 (depends on 4) The data output device of claim 4, wherein the signal generation unit comprises: a first SR flip-flop configured to be set by a mode register set command and be reset by an output of the first delay element; a second SR flip-flop configured to be set by the mode register set command and be reset by an output of the second delay element; and an operation part configured to operate outputs of the first and second SR flip-flops and generate an output signal. ### Claim 6 (depends on 5) The data output device of claim 5, wherein the operation part comprises: an inverter configured to invert an output of the second SR flip-flop; and an operator configured to NAND an output of the first SR flip-flop and an output of the inverter. ### Claim 7 A data output device of a semiconductor memory apparatus, comprising: an output driver configured to be inputted with, amplify and output a signal; and control means configured to detect a specified operation frequency range and control a slew rate of the output driver at the specified operation frequency range. ### Claim 8 (depends on 7) The data output device of claim 7, wherein the output driver comprises: pre-driving means configured to be inputted with signals; and driving means configured to receive outputs of the pre-driving means and drive an output of data. ### Claim 9 (depends on 8) The data output device of claim 8, wherein the control means comprises: detection means configured to detect a specified operation frequency range; adjustment means configured to adjust a slew rate of the driving means under the control of an output signal of the detection means. ### Claim 10 (depends on 9) The data output device of claim 9, wherein the adjustment means comprises: resistors connected between the pre-driving means and the driving means; and control switching units connected to both ends of the resistors to be controlled by the output signal of the detection means. ### Claim 11 (depends on 10) The data output device of claim 10, wherein the detection means comprises: delay elements having delay amounts to detect the specified operation frequency range; and a signal generation unit configured to generate a signal on the basis of output values of the delay elements and turn on or off the control switching units. ### Claim 12 A data output device of a semiconductor memory apparatus, comprising: a plurality of output drivers configured to be inputted with, amplify and output a signal to an output terminal; and control means configured to detect a specified operation frequency range and control slew rates of the plurality of output drivers at the specified operation frequency range. ### Claim 13 (depends on 12) The data output device of claim 12, wherein the plurality of output drivers are configured in a push-pull type. ### Claim 14 (depends on 13) The data output device of claim 13, wherein the plurality of output drivers are configured by connecting a plurality of push-pull type drivers in parallel. ### Claim 15 (depends on 14) The data output device of claim 14, wherein the control means comprises: detection means configured to detect a specified operation frequency range; adjustment means configured to adjust slew rates of the drivers under the control of an output signal of the detection means. ### Claim 16 (depends on 15) The data output device of claim 15, wherein the adjustment means comprises: resistors connected between the drivers; and control switching units connected to both ends of the resistors to be controlled by the output signal of the detection means. ### Claim 17 (depends on 16) The data output device of claim 16, wherein the detection means comprises: delay elements having delay amounts to detect the specified operation frequency range; and a signal generation unit configured to generate a signal on the basis of output values of the delay elements and turn on or off the control switching units. ### Claim 18 A data output device of a semiconductor memory apparatus, comprising: detection means configured to detect a specified operation frequency range; a plurality of pre-driving means configured to be inputted with signals; a plurality of driving means configured to receive outputs of the pre-driving means and drive an output of data; and adjustment means configured to control the number of operable driving means under the control of an output signal of the detection means. ### Claim 19 (depends on 18) The data output device of claim 18, wherein the adjustment means operates the output signal of the detection means and output signals of the plurality of pre-driving means and controls operation of the plurality of driving means. ### Claim 20 (depends on 19) The data output device of claim 19, wherein the detection means comprises: delay elements having delay amounts to detect the specified operation frequency range; and a signal generation unit configured to generate a signal on the basis of output values of the delay elements and turn on or off the adjustment means.