# US 2010/0165162 A1 · Solid-state imaging device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2010/0165162 A1 - Document ID: US20100165162A1 - Status: Published application - Kind: A1 - Application number: 12/720,549 - Filed: 2010-03-09 - Published: 2010-07-01 - Earliest claimed: 2003-03-07 - Assignees: Panasonic Corporation - Inventors: Makoto INAGAKI; Yoshiyuki Matsunaga - Web page: https://patentgrep.com/patent/US20100165162A1 ## CPC - H10F 39/803: {Pixels having integrated switching, control, storage or amplification elements} - H04N 25/40: Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled - H04N 25/616: involving a correlated sampling function, e.g. correlated double sampling [CDS] or triple sampling - H04N 25/766: comprising control or output lines used for a plurality of functions, e.g. for pixel output, driving, reset or power - H04N 25/77: Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components - H04N 25/78: Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters - H10F 39/802: {Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes} - H10F 39/811: {Interconnections} - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION - H04N: PICTORIAL COMMUNICATION, e.g. TELEVISION ## Abstract In each photosensitive cell, a photodiode 101, a transfer gate 102, a floating diffusion layer section 103, an amplifier transistor 104, and a reset transistor 105 are formed in one active region surrounded by a device isolation region. The floating diffusion layer section 103 included in one photosensitive cell is connected not to the amplifier transistor 104 included in that cell but to the gate of the amplifier transistor 104 included in another photosensitive cell adjacent to the one photosensitive cell in the column direction. A polysilicon wire 111 connects the transfer gates 102 arranged in the same row, and a polysilicon wire 112 connects the reset transistors 105 arranged in the same row. For connection in the row direction, only polysilicon wires are used. ## Claims ### Claim at position 1 1-7. (canceled) ### Claim 8 A solid-state imaging device, comprising: a plurality of photodiodes for performing optical-electrical conversion, each of the photodiodes being two-dimensionally arranged in row and column directions on a semiconductor substrate; a plurality of transfer gates for transferring a signal electric charge obtained from performing the optical-electrical conversion, each of the transfer gates being provided on the semiconductor substrate for a corresponding one of the photodiodes; a plurality of floating diffusion layers for temporarily storing the transferred signal electric charge, each of the floating diffusion layers being provided for at least one of the corresponding photodiodes and at least one of the corresponding transfer gates; an amplifier transistor for amplifying the signal electric charge supplied to a gate thereof; the amplifier transistor being provided on the semiconductor substrate; a reset transistor for resetting the signal electric charge stored in the floating diffusion layer, the reset transistor being provided on the semiconductor substrate; a vertical signal line for outputting a signal corresponding to the signal electric charge in the floating diffusion layer, a signal line connecting a floating diffusion layer with a gate of an amplifier transistor, the line including a portion disposed in a column direction; a first contact for receiving an output of a source of the amplifier transistor; a second contact connected to a drain of the reset transistor; and a third contact connected to a source of the reset transistor, wherein a gate of the amplifier transistor is connected, in the column direction, to at least one of the plurality of floating diffusion layers, the gate of the amplifier transistor and the floating diffusion layer connected thereto are formed in different active regions respectively, and the first, second, and third contacts are aligned in a straight line. ### Claim 9 (depends on 8) The solid-state imaging device according to claim 8, wherein the signal line includes a straight portion disposed in the column direction. ### Claim 10 (depends on 8) The solid-state imaging device according to claim 8, wherein the signal line includes a portion disposed in a direction traversing column direction. ### Claim 11 (depends on 8) The solid-state imaging device according to claim 8, wherein the signal line includes a straight portion disposed in a first column direction and another portion disposed in a direction traversing the column direction, and the straight portion is connected to the associated floating diffusion element. ### Claim 12 (depends on 8) The solid-state imaging device according to claim 8, wherein the transfer gate and the reset gate share a common drain. ### Claim 13 (depends on 8) The solid-state imaging device according to claim 8, wherein transfer gates corresponding to adjacent photodiodes for a given row of photodiodes are formed by a continuous conducting material. ### Claim 14 (depends on 8) The solid-state imaging device according to claim 8, wherein the signal line and the vertical signal line are formed in a same metal wire layer. ### Claim 15 (depends on 8) The solid-state imaging device according to claim 8, wherein the signal line and the vertical signal line are arranged in parallel to each other. ### Claim 16 A solid-state imaging device, comprising: a plurality of photodiodes for performing optical-electrical conversion, each of the photodiodes being two-dimensionally arranged in row and column directions on a semiconductor substrate; a plurality of transfer gates for transferring a signal electric charge obtained from performing the optical-electrical conversion, each of the transfer gates being provided on the semiconductor substrate for a corresponding one of the photodiodes; a plurality of floating diffusion layers for temporarily storing the transferred signal electric charge, each of the floating diffusion layers being provided for at least one of the corresponding photodiodes and at least one of the corresponding transfer gates; an amplifier transistor for amplifying the signal electric charge supplied to a gate thereof; the amplifier transistor being provided on the semiconductor substrate; a reset transistor for resetting the signal electric charge stored in the floating diffusion layer, the reset transistor being provided on the semiconductor substrate; a vertical signal line for outputting a signal corresponding to the signal electric charge in the floating diffusion layer; a signal line connecting a floating diffusion layer with a gate of an amplifier transistor, the line including a portion disposed in a column direction; a first contact for receiving an output of a source of the amplifier transistor; a third contact connected to a source of the reset transistor; and a fourth contact for supplying an input to a drain of the amplifier transistor, wherein a gate of the amplifier transistor is connected, in column direction, to at least one of the plurality of floating diffusion layers, the gate of the amplifier transistor and the floating diffusion layer connected thereto are formed in different active regions respectively, and the first, third, and fourth contacts are aligned in a straight line. ### Claim 17 (depends on 16) The solid-state imaging device according to claim 16, wherein the signal line includes a straight portion disposed in the column direction. ### Claim 18 (depends on 16) The solid-state imaging device according to claim 16, wherein the signal line includes a portion disposed in a direction traversing column direction. ### Claim 19 (depends on 16) The solid-state imaging device according to claim 16, wherein the signal line includes a straight portion disposed in a first column direction and another portion disposed in a direction traversing column direction, and the straight portion is connected to the associated floating diffusion element. ### Claim 20 (depends on 16) The solid-state imaging device according to claim 16, wherein the transfer gate and the reset gate share a common drain. ### Claim 21 (depends on 16) The solid-state imaging device according to claim 16, wherein transfer gates corresponding to adjacent photodiodes for a given row of photodiodes are formed by a continuous conducting material. ### Claim 22 (depends on 16) The solid-state imaging according to claim 16, wherein the signal line and the vertical signal line are formed in a same metal wire layer. ### Claim 23 (depends on 16) The solid-state imaging device according to claim 16, wherein the signal line and the vertical signal line are arranged in parallel to each other.