# US 2010/0165159 A1 · Solid state imaging device

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- Number: US 2010/0165159 A1
- Document ID: US20100165159A1
- Status: Published application
- Kind: A1
- Application number: 12/723,319
- Filed: 2010-03-12
- Published: 2010-07-01
- Earliest claimed: 2004-10-05
- Assignees: Sony Corporation
- Inventors: Tetsuro Kumesawa
- Web page: https://patentgrep.com/patent/US20100165159A1

## CPC

- H04N 23/741: by increasing the dynamic range of the image compared to the dynamic range of the electronic image sensors
- H04N 25/575: {with a response composed of multiple slopes}
- H04N 25/73: using interline transfer [IT]
- H10F 39/18: Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F 39/80: {Constructional details of image sensors}
- H10F 39/8033: {Photosensitive area}
- H04N: PICTORIAL COMMUNICATION, e.g. TELEVISION
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION

## Abstract

A solid state imaging device in which Υ characteristic is obtained and enlargement of dynamic range is provided. The solid state imaging device of the present invention includes a vertical overflow function and has a feature in which potential of a semiconductor substrate is changed from a high potential to a low potential in a stepwise manner during a period from an exposure start to an exposure end.

## Claims

### Claim 1

A solid state imaging device having a vertical overflow function, the solid state imaging device comprising:
a semiconductor substrate;
a p-type well region formed on the substrate;
a photosensor portion formed on the p-type well region, the photosensor portion including an n-type semiconductor region and a p-type charge accumulation region formed on the surface of the n-type semiconductor region; and
a substrate voltage value controller configured to change a potential applied to the semiconductor substrate from a high potential to a low potential in a stepwise manner during an exposure period, wherein said solid state imaging device is formed on a rear surface side of the semiconductor substrate, thereby increasing a potential barrier of the p-type well region from a low state to a high state in a corresponding stepwise manner.

### Claim 2 (depends on 1)

A solid state imaging device according to claim 1, wherein an amount of a saturation current is controlled so as to become larger in a stepwise manner depending on the stepwise change of said semiconductor substrate potential.

### Claim 3 (depends on 1)

A solid state imaging device according to claim 1, wherein the substrate voltage value controller is configured to change the potential in a horizontal blanking period.