# US 2010/0164483 A1 · Hall Element and Magnetic Sensor

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- Number: US 2010/0164483 A1
- Document ID: US20100164483A1
- Status: Published application
- Kind: A1
- Application number: 12/225,371
- Filed: 2007-03-30
- Published: 2010-07-01
- Earliest claimed: 2006-04-03
- Assignees: Asahi Kasei EMD Corporation
- Inventors: Takayuki Namai; Katsumi Kakuta
- Web page: https://patentgrep.com/patent/US20100164483A1

## CPC

- G01R 33/07: Hall effect devices
- G01R 33/075: {Hall devices configured for spinning current measurements}
- H10N 52/101: {Semiconductor Hall-effect devices}
- G01R: MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES (indicating correct tuning of resonant circuits H03J3/12)
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR

## Abstract

A Hall element is provided which has a high sensitivity and contributes to an improvement in S/N ratio per current by using a low-concentration n-well within a suitable range. The Hall element includes a p-type semiconductor substrate layer 21 of p-type silicon, and an n-type impurity region 22 located in a surface of the p-type semiconductor substrate layer 21, the n-type impurity region 22 functioning as a magnetic sensing part 26. A p-type impurity region 23 is located in a surface of the n-type impurity region 22, and n-type regions 24 are located laterally of the p-type impurity region 23. A p-type substrate region 21a having a resistivity equal to that of the p-type semiconductor substrate layer 21 is located to extend around the n-type impurity region 22. An impurity concentration N in the n-type impurity region 22 functioning as the magnetic sensing part 26 is preferably from 1×1016 to 3×1016 (atoms/cm3), and a distribution depth D of the impurity concentration is preferably from 3.0 μm to 5.0 μm.

## Claims

### Claim 1

A Hall element including an n-type impurity region located in a surface of a p-type semiconductor substrate layer, said n-type impurity region functioning as a magnetic sensing part, characterized in that
a p-type impurity region is located in a surface of said n-type impurity region, and said n-type impurity region is surrounded by a p-type substrate region of said p-type semiconductor substrate layer.

### Claim 2 (depends on 1)

The Hall element according to claim 1, characterized in that an impurity concentration N in said n-type impurity region is 1×1016 (atoms/cm3)≦N≦3×1016 (atoms/cm3), and a distribution depth D of said impurity concentration is 3.0 μm≦D≦5.0 μm.

### Claim 3 (depends on 1, 2)

The Hall element according to claim 1 or 2, characterized in that said p-type substrate region has a resistivity equal to that of said p-type semiconductor substrate layer.

### Claim 4 (depends on 1, 2, 3)

A magnetic sensor characterized in that a plurality of Hall elements according to any one of claims 1 to 3 are provided on a semiconductor substrate; and a magnetic substance having a function of magnetic concentration is provided on the Hall elements.

### Claim 5 (depends on 4)

An azimuth measuring device characterized in that the magnetic sensor according to claim 4 is used therein.