# US 2010/0164077 A1 · Semiconductor device and method of manufacturing same

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- Number: US 2010/0164077 A1
- Document ID: US20100164077A1
- Status: Published application
- Kind: A1
- Application number: 12/647,445
- Filed: 2009-12-26
- Published: 2010-07-01
- Earliest claimed: 2008-12-26
- Assignees: Renesas Technology Corp.
- Inventors: Koji Bando; Kazuyuki Misumi; Tatsuhiko Akiyama; Naoki Izumi; Akira Yamazaki
- Web page: https://patentgrep.com/patent/US20100164077A1

## CPC

- H10W 70/411: {Chip-supporting parts, e.g. die pads}
- G11C 11/16: using elements in which the storage effect is based on magnetic spin effect
- H10W 42/20: protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons
- H10W 42/287: {materials for magnetic shielding, e.g. ferromagnetic materials}
- H10W 72/30: Die-attach connectors
- H10B 61/22: {of the field-effect transistor [FET] type}
- H10W 72/073: {of die-attach connectors}
- H10W 72/075: {of bond wires}
- H10W 72/5522: {comprising gold [Au]}
- H10W 72/884: {Die-attach connectors and bond wires}
- H10W 74/00: Encapsulations, e.g. protective coatings
- H10W 90/736: {between a chip and a stacked lead frame, conducting package substrate or heat sink}
- H10W 90/754: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10W 90/756: {between a chip and a stacked lead frame, conducting package substrate or heat sink}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- G11C: STATIC STORES (semiconductor memory devices H10B)
- H10B: ELECTRONIC MEMORY DEVICES

## Abstract

To provide a technique that can improve the data retention characteristic of an MRAM device by improving the resistance against an external magnetic field in a semiconductor device including the MRAM device. A first magnetic shield material is disposed over a die pad via a first die attach film. Then, a semiconductor chip is mounted over the first magnetic shield material via a second die attach film. Furthermore, a second magnetic shield material is disposed over the semiconductor chip via a third die attach film. That is, the semiconductor chip is disposed so as to be sandwiched by the first magnetic shield material and the second magnetic shield material. At this time, while the planar area of the second magnetic shield material is smaller than that of the first magnetic shield material, the thickness of the second magnetic shield material is thicker than that of the first magnetic shield material.

## Claims

### Claim 1

A semiconductor device, comprising:
(a) a die pad;
(b) a plurality of leads disposed around the die pad;
(c) a semiconductor chip having a principal surface and a rear surface opposite to the principal surface, and including a plurality of magnetic memory elements and a plurality of bonding pads on the principal surface side, the semiconductor chip being disposed over the die pad;
(d) a first magnetic shield material disposed between the die pad and the rear surface of the semiconductor chip;
(e) a second magnetic shield material disposed over the principal surface of the semiconductor chip, and disposed so as to cover a region where the magnetic memory elements are formed;
(f) a plurality of bonding wires for electrically coupling the bonding pads to the leads, respectively; and
(g) a resin body sealing apart of the respective leads, the bonding wires, the die pad, the semiconductor chip, the first magnetic shield material, and the second magnetic shield material,
wherein an area of the second magnetic shield material is formed smaller than an area of the principal surface of the semiconductor chip, and
wherein a thickness of the second magnetic shield material is formed thicker than a thickness of the first magnetic shield material.

### Claim 2 (depends on 1)

The semiconductor device according to claim 1,
wherein a plurality of dimples is formed in a surface of the second magnetic shield material.

### Claim 3 (depends on 1)

The semiconductor device according to claim 1,
wherein an area of the die pad is formed smaller than an area of the first magnetic shield material, and wherein a plurality of dimples is formed in a surface of the first magnetic shield material exposed from the die pad.

### Claim 4 (depends on 2)

The semiconductor device according to claim 2,
wherein the dimples formed in the surface of the second magnetic shield material are formed by etching.

### Claim 5 (depends on 3)

The semiconductor device according to claim 3,
wherein the dimples formed in the surface of the first magnetic shield material are formed by etching.

### Claim 6 (depends on 1)

The semiconductor device according to claim 1,
wherein the first magnetic shield material and the second magnetic shield material are formed from an alloy of nickel and iron.

### Claim 7 (depends on 1)

The semiconductor device according to claim 1,
wherein the area of the first magnetic shield material is formed larger than the area of the principal surface of the semiconductor chip.

### Claim 8 (depends on 1)

The semiconductor device according to claim 1,
wherein the area of the first magnetic shield material is formed to be the same as the area of the principal surface of the semiconductor chip.

### Claim 9 (depends on 1)

The semiconductor device according to claim 1,
wherein the bonding pads are disposed around the principal surface of the semiconductor chip, and
wherein the second magnetic shield material is disposed inside the bonding pads.

### Claim 10

A semiconductor device, comprising:
(a) a die pad;
(b) a plurality of leads disposed around the die pad and including a plurality of signal leads and a plurality of fixed potential leads;
(c) a semiconductor chip having a principal surface and a rear surface opposite to the principal surface, and including on the principal surface side a microprocessor unit that executes data processing according to a program, a memory unit that includes a plurality of magnetic memory elements, a plurality of signal bonding pads, and a plurality of fixed potential bonding pads, the semiconductor chip being disposed over the die pad;
(d) a plurality of signal bonding wires electrically coupling the signal bonding pads to the signal leads, respectively;
(e) a first fixed potential bonding wire electrically coupling a first group of the fixed potential bonding pads to a first group of the fixed potential leads, respectively;
(f) a first magnetic shield material disposed between the die pad and the rear surface of the semiconductor chip;
(g) a second magnetic shield material disposed over the principal surface of the semiconductor chip, and disposed so as to cover at least a region where the memory unit is formed;
(h) a plurality of second fixed potential bonding wires electrically coupling a second group of the fixed potential bonding pads to the first magnetic shield material, respectively; and
(i) a resin body sealing the signal bonding wires, the first fixed potential bonding wires, the second fixed potential bonding wires, a part of the respective leads, the die pad, the semiconductor chip, the first magnetic shield material, and the second magnetic shield material,
wherein an area of the die pad is formed smaller than an area of the first magnetic shield material;
wherein an area of the first magnetic shield material is formed larger than an area of the principal surface of the semiconductor chip; and
wherein each of the second group of the fixed potential bonding pads is coupled to the first magnetic shield material of a region exposed from the semiconductor chip in a planar view.

### Claim 11 (depends on 10)

The semiconductor device according to claim 10,
wherein an area of the second magnetic shield material is formed smaller than the area of the first magnetic shield material, and
wherein a thickness of the second magnetic shield material is formed thicker than a thickness of the first magnetic shield material.

### Claim 12

A semiconductor device, comprising:
(a) a die pad;
(b) a plurality of leads disposed around the die pad;
(c) a semiconductor chip having a principal surface and a rear surface opposite to the principal surface and including a plurality of magnetic memory elements and a plurality of bonding pads on the principal surface side, the semiconductor chip being disposed over the die pad;
(d) a first magnetic shield material disposed between the die pad and the rear surface of the semiconductor chip;
(e) a second magnetic shield material disposed over the principal surface of the semiconductor chip, and disposed so as to cover a region where the magnetic memory elements are formed;
(f) a plurality of bonding wires electrically coupling the bonding pads to the leads, respectively; and
(g) a resin body sealing apart of the respective leads, the bonding wires, the die pad, the semiconductor chip, the first magnetic shield material, and the second magnetic shield material,
wherein an area of the first magnetic shield material is formed larger than an area of the semiconductor chip, and
wherein the first magnetic shield material is bent so that an end thereof is positioned on a side face side of the semiconductor chip.

### Claim 13 (depends on 12)

The semiconductor device according to claim 12,
wherein an area of the second magnetic shield material is formed smaller than an area of the first magnetic shield material, and
wherein a thickness of the second magnetic shield material is formed thicker than a thickness of the first magnetic shield material.

### Claim 14

A semiconductor device, comprising:
(a) a die pad;
(b) a plurality of leads disposed around the die pad;
(c) a fixed potential lead disposed between the die pad and the leads in a planar view;
(d) a semiconductor chip having a principal surface and a rear surface opposite to the principal surface, and including a plurality of magnetic memory elements and a plurality of bonding pads on the principal surface side, the semiconductor chip being disposed over the die pad;
(e) a first magnetic shield material disposed between the die pad and the rear surface of the semiconductor chip;
(f) a second magnetic shield material disposed over the principal surface of the semiconductor chip, and disposed so as to cover a region where the magnetic memory elements are formed;
(g) a third magnetic shield material disposed in a surface of the fixed potential lead;
(h) a plurality of bonding wires electrically coupling the bonding pads to the leads and electrically coupling the bonding pads to the fixed potential lead, respectively; and
(i) a resin body sealing apart of the respective leads, the fixed potential lead, the bonding wires, the die pad, the semiconductor chip, the first magnetic shield material, the second magnetic shield material, and the third magnetic shield material,
wherein the fixed potential lead and the third magnetic shield material are disposed so that parts thereof are positioned on a side face side of the semiconductor chip in a cross sectional view.

### Claim 15 (depends on 14)

The semiconductor device according to claim 14,
wherein an area of the second magnetic shield material is formed smaller than an area of the first magnetic shield material, and
wherein a thickness of the second magnetic shield material is formed thicker than a thickness of the first magnetic shield material.

### Claim 16

A method of manufacturing a semiconductor device comprising the steps of:
(a) preparing a lead frame including a die pad and a plurality of leads disposed around the die pad;
(b) preparing a semiconductor wafer having a principal surface and a rear surface opposite to the principal surface, the semiconductor wafer including on the principal surface side a plurality of chip areas where a plurality of magnetic memory elements and a plurality of bonding pads are formed;
(c) sticking a first adhesive film material to the rear surface of the semiconductor wafer;
(d) after the step (c), sticking a first magnetic shield material to the rear surface of the semiconductor wafer via the first film material;
(e) after the step (d), sticking a second adhesive film material to a rear surface of the first magnetic shield material;
(f) after the step (e), dicing the semiconductor wafer and the first magnetic shield material stuck to the rear surface of the semiconductor wafer altogether and thereby forming a plurality of semiconductor chips to which the singulated first magnetic shield material is stuck;
(g) after the step (f), mounting the semiconductor chip, to which the first magnetic shield material is stuck, over the die pad so that the first magnetic shield material is sandwiched between the semiconductor chip and the die pad;
(h) disposing a second magnetic shield material over the principal surface of the semiconductor chip so as to cover a region where the magnetic memory elements are formed;
(i) electrically coupling the leads to the bonding pads with a plurality of bonding wires; and
(j) sealing a part of the leads, the bonding wires, the die pad, the semiconductor chip, the first magnetic shield material, and the second magnetic shield material with a resin body,
wherein an area of the second magnetic shield material is formed smaller than an area of the principal surface of the semiconductor chip, and
wherein a thickness of the second magnetic shield material is formed thicker than a thickness of the first magnetic shield material.

### Claim 17 (depends on 16)

The method of manufacturing a semiconductor device according to claim 16,
wherein a plurality of dimples is formed in a surface of the second magnetic shield material by etching.

### Claim 18 (depends on 16)

The method of manufacturing a semiconductor device according to claim 16,
wherein an area of the die pad is formed smaller than an area of the first magnetic shield material, and
wherein a plurality of dimples is formed in a surface of the first magnetic shield material exposed from the die pad, by etching.

### Claim 19 (depends on 16)

The method of manufacturing a semiconductor device according to claim 16,
wherein the first magnetic shield material and the second magnetic shield material are formed from an alloy of nickel and iron.

### Claim 20

A method of manufacturing a semiconductor device, comprising the steps of:
(a) preparing a die pad and a lead frame including a plurality of leads disposed around the die pad;
(b) preparing a semiconductor chip having a principal surface and a rear surface opposite to the principal surface, the semiconductor chip including on the principal surface side a plurality of magnetic memory elements and a plurality of bonding pads;
(c) mounting the semiconductor chip over the die pad;
(d) disposing a magnetic shield material over the principal surface of the semiconductor chip so as to cover a region where the magnetic memory elements are formed;
(e) electrically coupling the leads to the bonding pads with a plurality of bonding wires; and
(f) sealing a part of the respective leads, the bonding wires, the die pad, the semiconductor chip, and the magnetic shield material with a resin body;
wherein the magnetic shield material is a magnetic shield material formed by patterning a plate-like magnetic shield material by selective etching.

### Claim 21 (depends on 20)

The method of manufacturing a semiconductor device according to claim 20,
wherein the etching is wet etching using an etchant.

### Claim 22

A method of manufacturing a semiconductor device, comprising the steps of:
(a) preparing a die pad and a lead frame including a plurality of leads disposed around the die pad;
(b) preparing a semiconductor chip having a principal surface and a rear surface opposite to the principal surface, the semiconductor chip including on the principal surface side a plurality of magnetic memory elements and a plurality of bonding pads;
(c) mounting the semiconductor chip over the die pad;
(d) disposing a magnetic shield material over the principal surface of the semiconductor chip so as to cover a region where the magnetic memory elements are formed;
(e) electrically coupling the leads to the bonding pads with a plurality of bonding wires; and
(f) sealing a part of the respective leads, the bonding wires, the die pad, the semiconductor chip, and the magnetic shield material with a resin body,
wherein the step (b) includes the steps of:
(b1) preparing a semiconductor wafer where the magnetic memory elements are formed in each of a plurality of chip areas;
(b2) forming a polyimide resin film in a surface of the semiconductor wafer;
(b3) performing heat treatment at a predetermined temperature on the polyimide resin film; and
(b4) forming a plurality of the semiconductor chips having the polyimide resin film in a surface thereof by dicing the semiconductor wafer;
wherein the step (d) includes the step of bonding the magnetic shield material to a surface of the polyimide resin film formed in each of the semiconductor chips; and
wherein the predetermined temperature of the heat treatment in the step (b3) is 260° C. or lower.