# US 2010/0164067 A1 · Capacitor element and semiconductor device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2010/0164067 A1 - Document ID: US20100164067A1 - Status: Published application - Kind: A1 - Application number: 12/720,132 - Filed: 2010-03-09 - Published: 2010-07-01 - Earliest claimed: 2007-10-03 - Assignees: Fujitsu Microelectronics Limited - Inventors: Tsuyoshi Sugisaki; Hajime Kurata - Web page: https://patentgrep.com/patent/US20100164067A1 ## CPC - H10W 20/496: {Capacitor integral with wiring layers} - H10D 84/212: {of only capacitors} - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract A semiconductor device includes a capacitor element including a first comb-shaped interconnection formed over a substrate and including a first comb tooth, a second comb-shaped interconnection formed over the substrate and including a second comb tooth opposed to the first comb tooth, and a first electrode and a second electrode opposed to each other with opposed surfaces of the first electrode and the second electrode intersecting a longitudinal direction of the first comb tooth and the second comb tooth, a first dielectric layer formed between the first electrode and the second electrode, the first electrode being connected to the first comb tooth, and the second electrode being connected to the second comb tooth. ## Claims ### Claim 1 A capacitor element comprising: a first comb-shaped interconnection formed over a substrate and including a first comb tooth; a second comb-shaped interconnection formed over the substrate and including a second comb tooth opposed to the first comb tooth; a first electrode and a second electrode opposed to each other with opposed surfaces of the first electrode and the second electrode intersecting a longitudinal direction of the first comb tooth and the second comb tooth; and a first dielectric layer formed between the first electrode and the second electrode, the first electrode being connected to the first comb tooth, and the second electrode being connected to the second comb tooth. ### Claim 2 (depends on 1) The capacitor element according to claim 1, further comprising a third electrode and a fourth electrode opposed to each other with opposed surfaces of the third electrode and the fourth electrode intersecting the longitudinal direction of the first comb tooth and the second comb tooth, the first comb-shaped interconnection further including a third comb tooth parallel with the first comb tooth, the second comb-shaped interconnection further including a fourth comb tooth parallel with the second comb tooth, and the third electrode being connected to the third comb tooth, and the fourth electrode being connected to the fourth comb tooth. ### Claim 3 (depends on 1) The capacitor element according to claim 1, further comprising: a fifth electrode formed below the first electrode and including a top connected to the first comb-shaped interconnection; a sixth electrode formed below the second electrode and including a top connected to the second comb-shaped interconnection and opposed to the fifth electrode; and a second dielectric layer formed between the fifth electrode and the sixth electrode. ### Claim 4 (depends on 1) The capacitor element according to claim 1, further comprising: a third comb-shaped interconnection formed over the substrate and including a fifth comb tooth; and a fourth comb-shaped interconnection formed over the substrate and having a sixth comb tooth opposed to the fifth comb tooth, a top of the first electrode being connected to the fifth comb tooth, and a top of the second electrode being connected to the sixth comb tooth. ### Claim 5 (depends on 1) The capacitor element according to claim 1, wherein the first electrode or the second electrode is formed of conduction layers and conductor plugs alternately stacked. ### Claim 6 (depends on 2) The capacitor element according to claim 2, wherein the third electrode or the fourth electrode is formed of conduction layers and conductor plugs alternately stacked. ### Claim 7 (depends on 1) The capacitor element according to claim 1, wherein the first electrode or the second electrode is formed of a plurality of conduction layers stacked. ### Claim 8 (depends on 2) The capacitor element according to claim 2, wherein the third electrode and the fourth electrode is formed of a plurality of conduction layers stacked. ### Claim 9 (depends on 5) The capacitor element according to claim 5, wherein one conduction layer of a plurality of the conduction layers and another conduction layer formed over said one conduction layer are connected via a plurality of the conductor plugs formed directly on said one conduction layer. ### Claim 10 (depends on 9) The capacitor element according to claim 9, wherein said a plurality of conductor plugs are formed on both ends of said one conduction layer. ### Claim 11 (depends on 2) The capacitor element according to claim 2, wherein the second comb tooth are arranged between the first comb tooth and the third comb tooth, and the third comb tooth are arranged between the second comb tooth and the fourth comb tooth. ### Claim 12 (depends on 1) The capacitor element according to claim 1, wherein the first comb-shaped interconnection and the second comb-shaped interconnection are formed of polycrystalline silicon, a metal containing Cu or a metal containing Al. ### Claim 13 A semiconductor device comprising a capacitor element formed over a semiconductor substrate, the capacitor element including a first comb-shaped interconnection formed over the substrate and including a first comb tooth; a second comb-shaped interconnection formed over the substrate and including a second comb tooth opposed to the first comb tooth; a first electrode and a second electrode opposed to each other with opposed surfaces of the first electrode and the second electrode intersecting a longitudinal direction of the first comb tooth and the second comb tooth; and a first dielectric layer formed between the first electrode and the second electrode, the first electrode being connected to the first comb tooth, and the second electrode being connected to the second comb tooth. ### Claim 14 (depends on 13) The semiconductor device according to claim 13, wherein the capacitor element further includes a third electrode formed below the first electrode and including a top connected to the first comb-shaped interconnection; a fourth electrode formed below the second electrode and including a top connected to the second comb-shaped interconnection and opposed to the third electrode; and a second dielectric layer formed between the third electrode and the fourth electrode. ### Claim 15 (depends on 13) The semiconductor device according to claim 13, wherein the capacitor element further includes a third comb-shaped interconnection formed over the substrate and having a fifth comb tooth; and a fourth comb-shaped interconnection formed over the substrate and including a sixth comb tooth opposed to the fifth comb tooth, a top of the first electrode connected to the fifth comb tooth, and a top of the second electrode being connected to the sixth comb tooth.