# US 2010/0164064 A1 · Capacitor and Method for Manufacturing the Same

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- Number: US 2010/0164064 A1
- Document ID: US20100164064A1
- Status: Published application
- Kind: A1
- Application number: 12/643,821
- Filed: 2009-12-21
- Published: 2010-07-01
- Earliest claimed: 2008-12-31
- Inventors: Hyun Dong KIM
- Web page: https://patentgrep.com/patent/US20100164064A1

## CPC

- H10P 14/69397: {the material containing two or more metal elements}
- H10D 1/68: Capacitors having no potential barriers
- H10P 14/6339: {deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD}
- H10P 14/662: {Laminate layers, e.g. stacks of alternating high-k metal oxides (adhesion layers or buffer layers H10P14/6508, H10P14/6548)}
- H10P 14/69392: {the material containing hafnium, e.g. HfO2}
- H10P 14/69395: {the material containing zirconium, e.g. ZrO2}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A capacitor and methods for manufacturing the capacitor are disclosed. The method may include forming a first electrode on a substrate, forming a dielectric layer on the first electrode, the dielectric layer having a first silicon oxide (SiO2) layer, a zirconium-doped hafnium oxide (Zr-doped HfO2) layer and a second silicon oxide layer sequentially, and forming a second electrode on the dielectric layer.

## Claims

### Claim 1

A method for manufacturing a capacitor, comprising:
forming a first electrode on a substrate;
forming a dielectric layer on the first electrode, the dielectric layer having a first silicon oxide (SiO2) layer, a zirconium-doped hafnium oxide (Zr-doped HfO2) layer and an second silicon oxide layer; and
forming a second electrode on the dielectric layer.

### Claim 2 (depends on 1)

The method of claim 1, wherein the first silicon oxide layer has a thickness of about 1 nm˜2 nm.

### Claim 3 (depends on 1)

The method of claim 1, wherein the second silicon oxide layer has a thickness of about 1 nm˜2 nm.

### Claim 4 (depends on 1)

The method of claim 1, wherein the zirconium-doped hafnium oxide layer has a zirconium (Zr) content of 4˜7% with respect to hafnium (Hf).

### Claim 5 (depends on 1)

The method of claim 1, wherein forming the Zr-doped hafnium oxide layer comprises introducing TEMAH (Hf[N(C2H5)(CH3)]4), TDMAH (Hf[N(C2H5)2]4) or TDMAH (Hf[N(CH3)2]4) as a Hf source gas into a chamber.

### Claim 6 (depends on 5)

The method of claim 5, wherein a carrier gas including nitrogen (N2) and/or argon (Ar) is introduced simultaneously with the Hf source gas.

### Claim 7 (depends on 5)

The method of claim 5, wherein forming the Zr-doped hafnium oxide layer further comprises introducing an oxidant gas into the chamber.

### Claim 8 (depends on 7)

The method of claim 7, wherein the oxidant gas comprises nitrous oxide.

### Claim 9 (depends on 7)

The method of claim 7, wherein forming the Zr-doped hafnium oxide layer further comprises introducing zirconium into the chamber.

### Claim 10 (depends on 9)

The method of claim 9, wherein forming the Zr-doped hafnium oxide layer comprises alternating (i) introducing the Hf source gas and the oxidant gas and (ii) introducing zirconium into the chamber.

### Claim 11 (depends on 1)

The method of claim 1, wherein the first and/or second electrodes comprise one or more titanium nitride (TiN) layers and/or one or more polysilicon layers.

### Claim 12

A capacitor, comprising:
a first electrode on a substrate;
a dielectric layer comprising a first silicon oxide (SiO2) layer, a zirconium-doped hafnium oxide (Zr-doped HfO2) layer and a second silicon oxide (SiO2) layer on the first electrode; and
a second electrode on the dielectric layer.

### Claim 13 (depends on 12)

The capacitor of claim 12, wherein the first and second silicon oxide (SiO2) layers have a thickness of about 1 nm˜2 nm.

### Claim 14 (depends on 12)

The capacitor of claim 12, wherein the Zr-doped HfO2 layer has a thickness of about 10 nm˜20 nm.

### Claim 15 (depends on 12)

The capacitor of claim 12, wherein the zirconium-doped hafnium oxide layer has a zirconium (Zr) concentration of about 4˜7% with respect to hafnium (Hf).

### Claim 16 (depends on 12)

The capacitor of claim 12, further comprising an insulating layer on the substrate.

### Claim 17 (depends on 12)

The capacitor of claim 12, wherein the first and/or second electrodes comprise titanium nitride.

### Claim 18 (depends on 12)

The capacitor of claim 12, wherein the first and/or second electrodes comprise one or more TiN layers and/or one or more polysilicon layers.

### Claim 19

A method for manufacturing a capacitor, comprising:
forming first and second electrodes on a substrate;
forming a dielectric layer on and/or between the first and second electrodes, the dielectric layer having a first silicon oxide layer, a zirconium-doped hafnium oxide layer on the first silicon oxide layer and a second silicon oxide layer on the zirconium-doped hafnium oxide layer.