# US 2010/0164041 A1 · Back side illuminaton image sensor and method for manufacturing the same

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- Number: US 2010/0164041 A1
- Document ID: US20100164041A1
- Status: Published application
- Kind: A1
- Application number: 12/641,010
- Filed: 2009-12-17
- Published: 2010-07-01
- Earliest claimed: 2008-12-26
- Assignees: Dongbu HiTek Co., Ltd.
- Inventors: MUN HWAN KIM
- Web page: https://patentgrep.com/patent/US20100164041A1

## CPC

- H10F 39/199: {Back-illuminated image sensors}
- H10F 39/811: {Interconnections}
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION

## Abstract

A back side illumination image sensor according to an embodiment includes: a photosensitive device and a readout circuit on the front side of a first substrate; an interlayer dielectric layer on the front side of the first substrate; a metal line on the interlayer dielectric layer; a pad having a step on the interlayer dielectric layer; and a second substrate bonded with the front side of the first substrate over the interlayer dielectric layer, metal line, and pad.

## Claims

### Claim 1

A back side illumination image sensor, comprising:
a photosensitive device and a readout circuit on a front side of a first substrate;
an interlayer dielectric layer on the front side of the first substrate over the photosensitive device and the readout circuit;
a metal line on the interlayer dielectric layer;
a pad having a step on the interlayer dielectric layer; and
a second substrate bonded with the front side of the first substrate over the metal line and the pad.

### Claim 2 (depends on 1)

The back side illumination image sensor according to claim 1, wherein a first metal of the metal line and the pad are formed at the same metal level.

### Claim 3 (depends on 1)

The back side illumination image sensor according to claim 1, further comprising a color filter on a back side of the first substrate.

### Claim 4 (depends on 1)

The back side illumination image sensor according to claim 1, further comprising a dielectric layer formed between the second substrate and the front side of the first substrate over the pad.

### Claim 5

A method of manufacturing a back side illumination image sensor, comprising:
forming an ion implantation layer in a front side of a first substrate;
forming a photosensitive device and a readout circuit on the front side of the first substrate above where the ion implantation layer is formed;
forming an interlayer dielectric layer on the front side of the first substrate over the photosensitive device and the readout circuit;
forming a metal line and a pad metal line on the interlayer dielectric layer;
bonding a second substrate with the front side of the first substrate over the metal line and pad metal line; and
removing a lower part of the first substrate under the ion implantation layer.

### Claim 6 (depends on 5)

The method of manufacturing the back side illumination image sensor according to claim 5, wherein the forming of the ion implantation layer and the forming of the photosensitive device and the readout circuit comprises:
forming the photosensitive device on the front side of the first substrate;
forming the ion implantation layer by implanting ions into the first substrate after forming the photosensitive device; and
forming the readout circuit on the front side of the first substrate after forming the ion implantation layer.

### Claim 7 (depends on 5)

The method of manufacturing the back side illumination image sensor according to claim 5, wherein the ion implantation layer is formed before forming the photosensitive device and the readout circuit.

### Claim 8 (depends on 5)

The method of manufacturing the back side illumination image sensor according to claim 5, wherein a first metal of the metal line and a pad of the pad metal line are formed at the same metal level, in the forming of the metal line and the pad metal line.

### Claim 9 (depends on 8)

The method of manufacturing the back side illumination image sensor according to claim 8, wherein the pad is formed to have a step, in the forming of the pad of the pad metal line.

### Claim 10 (depends on 8)

The method of manufacturing the back side illumination image sensor according to claim 8, wherein the forming of the interlayer dielectric layer and the forming of the metal line and the pad metal line comprises:
forming a first interlayer dielectric layer on the front side of the first substrate;
removing a portion of the first interlayer dielectric layer at a part of a region where a pad of the pad metal line will be formed;
forming a first metal metal layer on the first interlayer dielectric layer having the portion removed;
forming a first metal of the metal line and the pad of the pad metal line by patterning the metal layer, the pad being formed on the first interlayer dielectric layer overlapping the removed portion of the first interlayer dielectric layer to have a step; and
forming a second interlayer dielectric layer on the first metal and the pad.

### Claim 11 (depends on 5)

The method of manufacturing the back side illumination image sensor according to claim 5, further comprising opening the pad after the removing of the lower part of the first substrate under the ion implantation layer.

### Claim 12 (depends on 11)

The method of manufacturing the back side illumination image sensor according to claim 11, wherein the opening of the pad is performing a process of opening the pad to the back side of the first substrate.

### Claim 13 (depends on 5)

The method of manufacturing the back side illumination image sensor according to claim 5, wherein the forming of the ion implantation layer comprises implanting hydrogen or helium ions into the first substrate through the front side of the first substrate.