# US 2010/0164037 A1 · Method for manufacturing image sensor

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- Number: US 2010/0164037 A1
- Document ID: US20100164037A1
- Status: Published application
- Kind: A1
- Application number: 12/643,429
- Filed: 2009-12-21
- Published: 2010-07-01
- Earliest claimed: 2008-12-29
- Inventors: Chung-Kyung Jung
- Web page: https://patentgrep.com/patent/US20100164037A1

## CPC

- H10F 39/811: {Interconnections}
- H10F 39/802: {Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes}
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION

## Abstract

A method of manufacturing an image sensor. A method of manufacturing an image sensor may include forming a circuit area including a circuitry on and/or over a semiconductor substrate having a pixel area and/or a peripheral area, provided with a photodiode. A method may include forming a metal interconnection layer, which may include a metal interconnection on and/or over a interlayer dielectric layer, on and/or over a circuit area, forming a trench over a metal interconnection layer of a pixel area, performing a cleaning process on and/or over a the metal interconnection layer including a trench, and/or forming a micro-lens on and/or over a bottom surface of a trench of a metal interconnection layer.

## Claims

### Claim 1

A method comprising:
forming a circuit area over a semiconductor substrate comprising a pixel area and a peripheral area including a photodiode;
forming a metal interconnection layer over said circuit area;
forming a trench over an interlayer dielectric layer of said metal interconnection layer;
performing a cleaning process over said metal interconnection layer including the trench; and
forming a micro-lens over a bottom surface of the trench.

### Claim 2 (depends on 1)

The method of claim 1, comprising forming a passivation layer over said metal interconnection layer including the trench, prior to forming said micro-lens.

### Claim 3 (depends on 2)

The method of claim 2, wherein said passivation layer comprises silicon nitride.

### Claim 4 (depends on 1)

The method of claim 1, wherein said cleaning process comprises at least one of a tetra methyl ammonium hydroxide chemical and a HNO3 chemical.

### Claim 5 (depends on 4)

The method of claim 4, wherein said cleaning process comprises:
a first cleaning process including said tetra methyl ammonium hydroxide chemical; and
a second cleaning process performed after said first cleaning process including said HNO3 chemical.

### Claim 6 (depends on 5)

The method of claim 5, wherein said first cleaning process comprises employing said tetra methyl ammonium hydroxide chemical for between approximately 20 seconds and 30 minutes.

### Claim 7 (depends on 4)

The method of claim 4, wherein a density of said tetra methyl ammonium hydroxide chemical is in a range between approximately 10% and 60%.

### Claim 8 (depends on 4)

The method of claim 4, wherein said cleaning process comprises employing said HNO3 chemical for between approximately 5 seconds and 60 seconds.

### Claim 9 (depends on 3)

The method of claim 3, wherein said cleaning process is performed by spraying said at least one of said tetra methyl ammonium hydroxide chemical and said HNO3 chemical using a spin scheme.

### Claim 10 (depends on 9)

The method of claim 9, wherein said spin scheme comprises at least one of:
a rotational speed between approximately 200 rpm and 800 rpm; and
a temperature between approximately 25° C. and 40° C.

### Claim 11 (depends on 1)

The method of claim 1, wherein said metal interconnection layer comprises:
a first metal interconnection formed over said pixel area; and
a second metal interconnection formed over said peripheral area, wherein the trench is formed over said first metal interconnection.

### Claim 12 (depends on 1)

The method of claim 1, comprising removing polymer generated when the trench is formed, prior to performing a cleaning process.

### Claim 13

An apparatus comprising:
a circuit area over a semiconductor substrate comprising a pixel area and a peripheral area including a photodiode;
a metal interconnection layer over said circuit area;
a trench over an interlayer dielectric layer of said metal interconnection layer; and
a micro-lens over a bottom surface of the trench,
wherein said metal interconnection layer including the trench comprises a cleaned portion.

### Claim 14 (depends on 13)

The apparatus of claim 13, comprising a passivation layer over said metal interconnection layer including the trench.

### Claim 15 (depends on 13)

The apparatus of claim 13, wherein said cleaned portion is cleaned comprising at least one of a tetra methyl ammonium hydroxide chemical and a HNO3 chemical.

### Claim 16 (depends on 15)

The apparatus of claim 15, wherein said cleaning process comprises:
a first cleaning process including said tetra methyl ammonium hydroxide chemical; and
a second cleaning process performed after said first cleaning process including said HNO3 chemical.

### Claim 17 (depends on 16)

The apparatus of claim 16, wherein said first cleaning process comprises employing said tetra methyl ammonium hydroxide chemical for between approximately 20 seconds and 30 minutes.

### Claim 18 (depends on 17)

The apparatus of claim 17, wherein said cleaning process is performed by spraying said at least one of said tetra methyl ammonium hydroxide chemical and said HNO3 chemical using a spin scheme.

### Claim 19 (depends on 13)

The apparatus of claim 13, wherein said metal interconnection layer comprises:
a first metal interconnection over said pixel area; and
a second metal interconnection over said peripheral area, wherein the trench is formed over said first metal interconnection.

### Claim 20 (depends on 13)

The apparatus of claim 13, comprising a substantially uniform portion.