# US 2010/0164036 A1 · Back side illumination image sensor and method for manufacturing the same

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- Number: US 2010/0164036 A1
- Document ID: US20100164036A1
- Status: Published application
- Kind: A1
- Application number: 12/640,954
- Filed: 2009-12-17
- Published: 2010-07-01
- Earliest claimed: 2008-12-26
- Assignees: Dongbu HiTek Co., Ltd.
- Inventors: MUN HWAN KIM
- Web page: https://patentgrep.com/patent/US20100164036A1

## CPC

- H10F 39/809: {of hybrid image sensors}
- H10F 39/018: {of hybrid image sensors}
- H10F 39/199: {Back-illuminated image sensors}
- H10F 39/807: {Pixel isolation structures}
- H10F 39/024: {of coatings or optical elements}
- H10F 39/8063: {Microlenses}
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION

## Abstract

Disclosed are a back side illumination image sensor and a method for manufacturing the same. The back side illumination image sensor includes an isolation region and a pixel area on a front side of a first substrate; a photo detector and a readout circuitry on the pixel area; an interlayer dielectric layer and a metal line on the front side of the first substrate; a second substrate bonded to the front side of the first substrate formed with the metal line; a pixel division ion implantation layer on the isolation region at a back side of the first substrate; and a micro-lens on the photo detector at the back side of the first substrate.

## Claims

### Claim 1

A back side illumination image sensor comprising:
an isolation region and a pixel area on a front side of a first substrate;
a photo detector and a readout circuitry on the pixel area;
an interlayer dielectric layer and a metal line on the front side of the first substrate;
a second substrate bonded to the front side of the first substrate formed with the metal line;
a pixel division ion implantation layer on the isolation region at a back side of the first substrate; and
a micro-lens on the photo detector at the back side of the first substrate.

### Claim 2 (depends on 1)

The back side illumination image sensor of claim 1, wherein the pixel division ion implantation layer includes a P type ion implantation area.

### Claim 3 (depends on 1)

The back side illumination image sensor of claim 1, further comprising a pad on the front side of the first substrate that is open through the back side of the first substrate.

### Claim 4 (depends on 1)

The back side illumination image sensor of claim 1, further comprising an insulating layer between the second substrate and the front side of the first substrate.

### Claim 5

A method for manufacturing a back side illumination image sensor, the method comprising:
forming an ion implantation layer by implanting ions over a whole area of a front side of a first substrate;
defining a pixel area by forming an isolation region on the front side of the first substrate;
forming a photo detector and a readout circuitry on the pixel area;
forming an interlayer dielectric layer and a metal line on the front side of the first substrate;
bonding a second substrate to the front side of the first substrate formed with the metal line;
removing a lower portion of the first substrate defined by the ion implantation layer;
forming a pixel division ion implantation layer on the isolation region at a back side of the first substrate after removing the lower portion of the first substrate; and
forming a micro-lens on the photo detector at the back side of the first substrate.

### Claim 6 (depends on 5)

The method of claim 5, wherein the forming of the pixel division ion implantation layer includes implanting ions into the back side of the first substrate such that the pixel division ion implantation layer ranges from the surface of the back side of the first substrate to the isolation region.

### Claim 7 (depends on 5)

The method of claim 5, wherein the forming of the pixel division ion implantation layer includes forming a P type ion implantation area on the isolation region.

### Claim 8 (depends on 5)

The method of claim 5, wherein the forming of the ion implantation layer includes implanting hydrogen ions or helium ions.

### Claim 9 (depends on 5)

The method of claim 5, wherein the forming of the ion implantation layer implants the ions through the front side of the first substrate such that the ion implantation layer is formed over the whole area in the front side of the first substrate at a predetermined depth.

### Claim 10 (depends on 5)

The method of claim 5, wherein the removing of the lower portion of the first substrate includes removing a portion of the first substrate at a side of the first substrate opposite to the front side of the first substrate by using the ion implantation layer.

### Claim 11 (depends on 5)

The method of claim 5, further comprising opening a pad formed on the front side of the first substrate after the lower portion of the first substrate has been removed.

### Claim 12 (depends on 11)

The method of claim 11, wherein the pad is open through the back side of the first substrate.

### Claim 13 (depends on 5)

The method of claim 5, further comprising forming an insulating layer on the second substrate before the second substrate is bonded to the front side of the first substrate, such that the insulating layer makes contact with the front side of the first substrate when the second substrate is bonded to the front side of the first substrate.

### Claim 14 (depends on 5)

The method of claim 5, wherein the ion implantation layer is formed before the isolation region.

### Claim 15 (depends on 5)

The method of claim 5, wherein the ion implantation layer is formed before forming the photo detector.

### Claim 16 (depends on 5)

The method of claim 5, wherein the ion implantation layer is formed after forming the photo detector.