# US 2010/0164031 A1 · Image sensor and manufacturing method thereof

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- Number: US 2010/0164031 A1
- Document ID: US20100164031A1
- Status: Published application
- Kind: A1
- Application number: 12/629,250
- Filed: 2009-12-02
- Published: 2010-07-01
- Earliest claimed: 2008-12-31
- Inventors: Chang Yeop Shin
- Web page: https://patentgrep.com/patent/US20100164031A1

## CPC

- H10F 39/024: {of coatings or optical elements}
- H10F 39/026: {Wafer-level processing}
- H10F 39/8057: {Optical shielding}
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION

## Abstract

An image sensor and a manufacturing method thereof are provided. The image sensor according to an embodiment includes: a semiconductor substrate where a light receiving device is formed for each pixel; a dielectric layer formed on the semiconductor substrate; and a metal layer formed in the dielectric layer and including metal wires and light shielding patterns formed on an interface between pixels. In the image sensor according to the embodiment, since the light shielding pattern is formed by using a dummy pattern of the metal wire, the light shielding pattern may be formed close to the semiconductor substrate to minimize generation of optical leakage current, thereby improving reliability of the device.

## Claims

### Claim 1

An image sensor, comprising:
a semiconductor substrate including a light receiving device formed for each pixel;
a dielectric layer formed on the semiconductor substrate; and
light shielding patterns formed in a metal wiring layer in the dielectric layer, the light shielding patterns being at an interface between pixels and separated from metal wires of the metal wiring layer.

### Claim 2 (depends on 1)

The image sensor according to claim 1, further comprising:
a passivation layer formed on the dielectric layer, above the metal wires and the light shielding patterns; and
a microlens formed on the passivation layer to correspond to the light receiving device.

### Claim 3 (depends on 1)

The image sensor according to claim 1, wherein the metal wires are electrically connected to a circuit layer on the semiconductor substrate.

### Claim 4 (depends on 1)

The image sensor according to claim 1, wherein the light shielding pattern and the metal wires in the metal wiring layer are made of the same material.

### Claim 5 (depends on 1)

The image sensor according to claim 1, wherein the light shielding pattern and the metal wires in the metal wiring layer include at least one of TiN and WSix.

### Claim 6 (depends on 1)

The image sensor according to claim 1, wherein the light shielding pattern and the metal wires in the wiring layer include an inorganic-based anti-reflection layer.

### Claim 7 (depends on 6)

The image sensor according to claim 6, wherein the inorganic-based anti-reflection layer is SiON.

### Claim 8 (depends on 1)

The image sensor according to claim 1, further comprising additional metal wiring layers in the dielectric layer below the metal wiring layer.

### Claim 9 (depends on 8)

The image sensor according to claim 8, wherein metal wires formed in the additional metal wiring layers include at least one of Al, Ti, W, Mo, Cu, and Ta.

### Claim 10 (depends on 1)

The image sensor according to claim 1, wherein thicknesses of the metal wires and the light shielding pattern in the metal wiring layer are 1500 to 2000 Å.

### Claim 11

A method of manufacturing an image sensor, comprising:
forming a light receiving device on a semiconductor substrate for each pixel;
forming a circuit layer on the semiconductor substrate;
forming a dielectric layer on the circuit layer; and
forming a metal layer in the dielectric layer,
wherein the metal layer comprises metal wires and light shielding patterns formed on an interface between pixels, wherein the metal wires of the metal layer are electrically connected to the circuit layer and the light shielding patterns are dummy metal wires.

### Claim 12 (depends on 11)

The method of manufacturing an image sensor according to claim 11, further comprising:
forming a passivation layer on the dielectric layer above the metal wires and the light shielding patterns; and
forming a microlens on the passivation layer to correspond to the light receiving device.

### Claim 13 (depends on 11)

The method of manufacturing an image sensor according to claim 11, wherein the metal layer includes at least one of TiN and WSix.

### Claim 14 (depends on 11)

The method of manufacturing an image sensor according to claim 11, further comprising:
forming an inorganic-based anti-reflection layer on the metal layer,
wherein the anti-reflection layer remains on the metal wires and the light shielding patterns after patterning a metallic material forming the metal wires and the light shielding patterns.

### Claim 15 (depends on 11)

The method of manufacturing an image sensor according to claim 11, further comprising forming additional metal layers in the dielectric layer below the metal layer, the additional metal layers comprising additional metal wires electrically connected with the circuit layer.

### Claim 16 (depends on 15)

The method of manufacturing an image sensor according to claim 15, wherein the additional metal layers include at least one of Al, Ti, W, Mo, Cu, and Ta.