# US 2010/0164017 A1 · Semiconductor device and method for fabricating the same

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- Number: US 2010/0164017 A1
- Document ID: US20100164017A1
- Status: Published application
- Kind: A1
- Application number: 12/716,817
- Filed: 2010-03-03
- Published: 2010-07-01
- Earliest claimed: 2004-09-27
- Assignees: Panasonic Corporation
- Inventors: Taiji NODA
- Web page: https://patentgrep.com/patent/US20100164017A1

## CPC

- H10P 32/171: {being group IV material}
- H10D 30/0218: {having pocket halo regions selectively formed at the sides of the gates}
- H10D 30/022: {having lightly-doped source or drain extensions selectively formed at the sides of the gates}
- H10D 30/0227: {having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET}
- H10D 30/601: {having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs (lightly doped source or drain extensions for TFTs H10D30/6715)}
- H10D 62/314: {having vertical doping variations (vertical IGFETs H10D30/63)}
- H10D 64/017: {using dummy gates in processes wherein at least parts of the final gates are self-aligned to the dummy gates, i.e. replacement gate processes}
- H10P 30/204: {into Group IV semiconductors}
- H10P 30/208: {of electrically inactive species}
- H10P 30/21: {of electrically active species}
- H10P 30/225: {of a molecular ion, e.g. decaborane}
- H10P 30/28: characterised by an annealing step, e.g. for activation of dopants
- H10P 32/1406: {by ion implantation}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

The semiconductor device of the present invention includes: a gate insulating film formed on a semiconductor region of a first conductivity type; a gate electrode formed on the gate insulating film; and a channel doped layer of the first conductivity type formed in the semiconductor region beneath the gate electrode. The channel doped layer contains carbon as an impurity.

## Claims

### Claim at position 1

1-29. (canceled)

### Claim 30

A semiconductor device comprising:
a gate insulating film formed on a semiconductor region of a first conductivity type;
a gate electrode formed on the gate insulating film;
extended doped layers of a second conductivity type formed in the semiconductor region under sides of the gate electrode; and
pocket doped layers of the first conductivity type formed in the semiconductor region under and in contact with the extended doped layers,
wherein the extended doped layers and the pocket doped layers are provided in an inside of a carbon-containing region.

### Claim 31 (depends on 30)

The device of claim 30, wherein
the carbon-containing region has a diffusion depth equal to or deeper than the pocket doped layers.

### Claim 32 (depends on 30)

The device of claim 30, further comprising:
sidewalls formed on lateral faces of the gate electrode; and
source/drain doped layers of a second conductivity type formed in the semiconductor region alongside the respective sidewalls, wherein
a region of the source/drain doped layers located far from the pocket doped layers does not include carbon.

### Claim 33 (depends on 30)

The device of claim 30, wherein
dopant ions introduced into the pocket doped layers are heavy ions having a relatively high mass number.

### Claim 34 (depends on 33)

The device of claim 33, wherein
the heavy ions are indium ions.

### Claim 35 (depends on 30)

The device of claim 30, wherein
the dopant ions introduced into the pocket doped layers are both of ions of boron and ions of an element that is heavier than boron and makes the pocket doped layers P conductivity type.

### Claim 36 (depends on 30)

The device of claim 30, further comprising
a channel doped layer of the first conductivity type formed in the semiconductor region under the gate electrode.

### Claim 37 (depends on 36)

The device of claim 36, wherein
the dopant ions introduced into the channel doped layer are both of ions of boron and ions of an element that is heavier than boron and makes the channel doped layers P conductivity type.

### Claim 38 (depends on 30)

The method of claim 30, wherein the semiconductor region is made of silicon.