# US 2010/0164010 A1 · Semiconductor device for improving channel mobility

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- Number: US 2010/0164010 A1
- Document ID: US20100164010A1
- Status: Published application
- Kind: A1
- Application number: 12/704,677
- Filed: 2010-02-12
- Published: 2010-07-01
- Earliest claimed: 2005-10-31
- Assignees: Kabushiki Kaisha Toshiba
- Inventors: Ryota Watanabe; Taiki Komoda; Amane Oishi; Yasunori Okayama
- Web page: https://patentgrep.com/patent/US20100164010A1

## CPC

- H10D 30/601: {having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs (lightly doped source or drain extensions for TFTs H10D30/6715)}
- H10B 10/00: Static random access memory [SRAM] devices
- H10B 10/12: {comprising a MOSFET load element}
- H10D 30/792: {comprising applied insulating layers, e.g. stress liners}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10B: ELECTRONIC MEMORY DEVICES

## Abstract

A semiconductor device includes a substrate, a gate electrode formed on the substrate, a source region and a drain region formed in the substrate, the source region and the drain region formed located on the both side of the gate electrode, a first insulating film formed on the substrate, the first insulating film for generating a stress in a channel region under the gate electrode, a contact formed on the source region and the drain region, and the contact formed so that an amount of the first insulating film formed on the source region is larger than an amount of the first insulating film formed on the drain region.

## Claims

### Claim 1

An SRAM cell array, comprising:
a plurality of SRAM cells including a transfer transistor, a driver transistor, and a load transistor;
a first source contact formed on a source region of the driver transistor;
a first drain contact formed on a drain region of the driver transistor;
a tensile film configured to generate a tensile stress in a channel region of the driver transistor;
a second source contact formed on a source region of the load transistor;
a second drain contact formed on a drain region of the load transistor; and
a compressive film configured to generate a compressive stress in a channel region of the load transistor,
wherein a first distance between the first source contact and a gate electrode of the driver transistor is greater than a second distance between the first drain contact and the gate electrode of the driver transistor, and
wherein a third distance between the second drain contact and a gate electrode of the load transistor is greater than a fourth distance between the second drain contact and the gate electrode of the load transistor.

### Claim 2 (depends on 1)

The SRAM cell array according to claim 1, wherein at least a first SRAM cell in the SRAM cell array is point symmetrical with a second SRAM cell in the SRAM cell array.

### Claim 3 (depends on 1)

The SRAM cell array according to claim 1, wherein the driver transistor is an n-type transistor and the load transistor is a p-type transistor.

### Claim 4

An SRAM cell array, comprising:
a plurality of SRAM cells including a transfer transistor, a driver transistor, and a load transistor;
a first source contact formed on a source region of the driver transistor;
a first drain contact formed on a drain region of the driver transistor;
a tensile film configured to generate a tensile stress in a channel region of the driver transistor;
a second source contact formed on a source region of the load transistor; and
a second drain contact formed on a drain region of the load transistor,
wherein a first distance between the first source contact and a gate electrode of the driver transistor is greater than a second distance between the first drain contact and the gate electrode of the driver transistor, and
wherein the tensile film is formed on the load transistor and a third distance between the second drain contact and a gate electrode of the load transistor is less than a fourth distance between the second drain contact and the gate electrode of the load transistor.

### Claim 5 (depends on 4)

The SRAM cell array according to claim 4, wherein at least a first SRAM cell in the SRAM cell array is point symmetrical with a second SRAM cell in the SRAM cell array.

### Claim 6 (depends on 4)

The SRAM cell array according to claim 4, wherein the driver transistor is an n-type transistor and the load transistor is a p-type transistor.

### Claim 7

An SRAM cell array, comprising:
a plurality of SRAM cells including a transfer transistor, a driver transistor, and a load transistor;
a first source contact formed on a source region of the driver transistor;
a first drain contact formed on a drain region of the driver transistor;
a tensile film configured to generate a compressive stress in a channel region of the driver transistor;
a second source contact formed on a source region of the load transistor; and
a second drain contact formed on a drain region of the load transistor,
wherein a first distance between the first source contact and a gate electrode of the driver transistor is less than a second distance between the first drain contact and the gate electrode of the driver transistor, and
wherein the compressive film is formed on the load transistor and a third distance between the second drain contact and a gate electrode of the load transistor is greater than a fourth distance between the second drain contact and the gate electrode of the load transistor.

### Claim 8 (depends on 7)

The SRAM cell array according to claim 7, wherein at least a first SRAM cell in the SRAM cell array is point symmetrical with a second SRAM cell in the SRAM cell array.

### Claim 9 (depends on 7)

The SRAM cell array according to claim 7, wherein the driver transistor is an n-type transistor and the load transistor is a p-type transistor.