# US 2010/0163906 A1 · Light Emitting Device with Air Bars and Method of Manufacturing the Same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2010/0163906 A1 - Document ID: US20100163906A1 - Status: Published application - Kind: A1 - Application number: 12/648,358 - Filed: 2009-12-29 - Published: 2010-07-01 - Earliest claimed: 2008-12-30 - Inventors: Chang Hee Hong; Hyung Gu Kim - Web page: https://patentgrep.com/patent/US20100163906A1 ## CPC - H10H 20/82: Roughened surfaces, e.g. at the interface between epitaxial layers - H10H 20/819: characterised by their shape, e.g. curved or truncated substrates - H10H 20/01335: {the light-emitting regions comprising nitride materials} - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS ## Abstract Disclosed are a light emitting device having at least one air bar capable of improving light extracting efficiency and a method of manufacturing the same. With the present invention, there is provided a method of manufacturing a light emitting device including a semiconductor layer(s) having an air-bar layer(s) with a plurality of air bars. The method includes at least one process cycle for forming the semiconductor layer(s). The process cycle includes: forming a patterning thin-film layer on a substrate or a thin-film layer; forming on the patterning thin-film layer an etching guide pattern and an air-bar pattern connected to the etching guide pattern; forming a semiconductor layer(s) on the patterns and exposing the etching guide pattern; wet-etch the exposed etching guide pattern by using a wet-etching solution; and etch the air-bar pattern connected to the etching guide pattern. ## Claims ### Claim 1 A light emitting device, comprising at least one semiconductor layer; and at least one air-bar layer including a plurality of air bars formed in the semiconductor layer(s). ### Claim 2 (depends on 1) The device of claim 1, wherein some of the semiconductor layers include at least one air-bar layer formed with a plurality of air bars in the inside. ### Claim 3 (depends on 1) The device of claim 1, wherein the air-bar layer(s) including a plurality of air bars formed in the semiconductor layer(s) is provided in a plural number. ### Claim 4 (depends on 1) The device of claim 1, wherein the air bars formed in the semiconductor layer(s) further includes air gaps formed by being connected along the air bars. ### Claim 5 (depends on 1) The device of claim 1, wherein the air bars have a three-dimensional shape, and the air bars having the three-dimensional shape are periodically or randomly arranged. ### Claim 6 (depends on 1) The device of claim 1, wherein the air bars have different three-dimensional shapes, and the air bars having the different three-dimensional shapes are periodically or randomly arranged. ### Claim 7 (depends on 1) The device of claim 1, wherein the air-bar layers are arranged crossing each other. ### Claim 8 (depends on 1) The device of claim 1, wherein the air-bar layers are arranged crossing each other on a vertical planar surface. ### Claim 9 (depends on 1) The device of claim 1, wherein each of the air-bar layers is arranged side by side on a horizontal planar surface. ### Claim 10 (depends on 1) The device of claim 1, wherein the air-bars are filled with a filing material. ### Claim 11 (depends on 10) The device of claim 10, wherein the filling material includes a metal. ### Claim 12 (depends on 10) The device of claim 10, wherein the filing materials includes a fluorescent material. ### Claim 13 (depends on 10) The device of claim 10, wherein the filing materials includes a fluorescent material, and sectional areas of the air bars are larger than a particle size of the fluorescent material. ### Claim 14 (depends on 1) The device of claim 1, wherein the air bars are periodically arranged. ### Claim 15 (depends on 1) The device of claim 1, wherein the air bars are brought into contact with a substrate or a thin-film layer, and an inner inclined angle between the air bars and the substrate or the thin-film layer is in a range of 20° to 70°. ### Claim 16 (depends on 1) The device of claim 1, wherein an uneven scattering surface is formed on an external surface of an uppermost layer of the semiconductor layer(s). ### Claim 17 (depends on 1) The device of claim 1, further comprising a transmissive conductive film formed on an external surface of an uppermost layer of the semiconductor layer(s); and an uneven scattering surface formed on the transmissive conductive film. ### Claim 18 (depends on 3) The device of claim 3, wherein the semiconductor layers include an n-type layer, an active layer, and a p-type layer. ### Claim 19 A method of manufacturing a light emitting device including a semiconductor layer(s) having an air-bar layer(s) with a plurality of air bars, the method comprising at least one process cycle, for forming the semiconductor layer(s), the process cycle comprising: forming a patterning thin-film layer on a substrate or a thin-film layer; forming on the patterning thin-film layer an etching guide pattern and an air-bar pattern connected to the etching guide pattern; forming a semiconductor layer(s) on the patterns and exposing the etching guide pattern; wet-etching the exposed etching guide pattern by using a wet-etching solution; and etching the air-bar pattern connected to the etching guide pattern. ### Claim 20 (depends on 19) The method of claim 19, wherein the process cycle further comprises at least one process cycle comprising: forming a patterning thin-film layer on the semiconductor layer(s) for the air bars; forming on the patterning thin-film layer an etching guide pattern and an air-bar pattern connected to the etching guide pattern; forming an additional semiconductor layer(s) on the patterns and exposing the etching guide pattern; wet-etching the exposed etching guide pattern by using a wet-etching solution; and etching the air-bar pattern connected to the etching guide pattern, thus resulting at least two semiconductor layers with an air bar layer, respectively, made of a plurality of air bars. ### Claim 21 (depends on 19) The method of claim 19, further comprising forming at least one additional semiconductor layer on the semiconductor layer(s), with the air bars, made by repeating the process cycle, the process cycle further comprising: forming a patterning thin-film layer on the semiconductor layer(s) for the air bars; forming on the patterning thin-film layer an etching guide pattern and an air-bar pattern connected to the etching guide pattern; forming an additional semiconductor layer(s) on the patterns and exposing the etching guide pattern; wet-etching the exposed etching guide pattern by using a wet-etching solution; and wet-etching the air-bar pattern connected to the etching guide pattern. ### Claim 22 (depends on 19) The method of claim 19, further comprising forming an air-gap pattern in the forming of the etching guide layer and the air-bar pattern connected thereto. ### Claim 23 (depends on 19) The method of claim 19, wherein the air-bar layers are arranged crossing each other. ### Claim 24 (depends on 19) The method of claim 19, wherein the air-bar layers are arranged crossing each other at a crossing angle(s). ### Claim 25 (depends on 19) The method of claim 19, wherein the patterning thin-film layer is made of one of oxide, nitride, tungsten, and platinum. ### Claim 26 (depends on 19) The method of claim 19, wherein the wet-etching solution includes at least one of sodium hydroxide, potassium hydroxide, sulfuric acid, phosphoric acid, aluetch, and hydrofluoric acid. ### Claim 27 (depends on 19) The method of claim 19, wherein a wet-etching is induced by forming an electrode on a surface of the semiconductor layer(s) and supplying a current or a beam of light thereto. ### Claim 28 (depends on 21) The method of claim 21, wherein the semiconductor layers includes an n-type layer, an active layer, and a p-type layer, and the semiconductor layers are formed by using a selective MOCVD method. ### Claim 29 (depends on 21) The method of claim 21, further comprising forming an uneven scattering surface on an external surface of an uppermost layer of the semiconductor layer(s). ### Claim 30 (depends on 21) The method of claim 21, further comprising forming a transmissive conductive film on an external surface of an uppermost layer of the semiconductor layer(s); and forming an uneven scattering surface on the transmissive conductive film. ### Claim 31 (depends on 21) The method of claim 21, further comprising separating the semiconductor layer(s) from the substrate. ### Claim 32 (depends on 31) The method of claim 31, wherein, in the separating of the semiconductor layer(s) from the substrate, an LLO method is used. ### Claim 33 (depends on 31) The method of claim 31, wherein, in the separating of the semiconductor layer(s) from the substrate, a CLO method is used. ### Claim 34 (depends on 19) The method of claim 19, wherein the etching guide pattern and the air-bar pattern, respectively or together, are periodically arranged. ### Claim 35 (depends on 19) The method of claim 19, further comprising filling a fluorescent material in the air bars by using a spin coater. ### Claim 36 (depends on 19) The method of claim 19, further comprising filling a fluorescent material in the air bars by using an ultrasonic wave. ### Claim 37 (depends on 19) The method of claim 19, further comprising filling a metal in the air bars by using an electroplating method. ### Claim 38 A method of manufacturing a light emitting device including a plurality of semiconductor layers having an air-bar layer(s) with a plurality of air bars, the method comprising processes of: forming a patterning thin-film layer on a substrate or a thin-film layer; forming on the patterning thin-film layer an etching guide pattern and an air-bar pattern connected to the etching guide pattern; forming a semiconductor layer(s) on the patterns and exposing the etching guide pattern; (A) forming a patterning thin-film layer on the semiconductor layer(s); (B) forming on the patterning thin-film layer an etching guide pattern and an air bar pattern connected to the etching guide pattern; (C) forming an additional semiconductor layer(s) on the patterns and exposing the etching guide pattern; continuously repeating the processes (A) to (C) while aligning positions of the exposed etching patterns; continuously performing etching along the etching guide patterns, the positions of the etching guide patterns being aligned to connect top to bottom, exposed on each uppermost layer of the semiconductor layers by using a wet-etching solution; and etching the air-bar patterns connected to the etching guide patterns on the layers. ### Claim 39 (depends on 38) The method of claim 38, wherein, after the process of continuously repeating the processes (A) to (C) while aligning positions of the exposed etching patterns, a metal thin film(s) and another semiconductor layer(s) where no air-bar pattern is formed are stacked together or individually and a mask layer is provided to perform a photolithography, and then, when an upper layer of the semiconductor layer(s) where the air-bar pattern is formed is etched, a wet etching is carried out by using the wet-etching solution.