# US 2010/0163784 A1 · Polishing Composition for Planarizing Metal Layer

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- Number: US 2010/0163784 A1
- Document ID: US20100163784A1
- Status: Published application
- Kind: A1
- Application number: 12/482,983
- Filed: 2009-06-11
- Published: 2010-07-01
- Earliest claimed: 2008-12-30
- Assignees: UWIZ Technology Co., Ltd.
- Inventors: Song-Yuan CHANG; Ming-Che Ho; Ming-hui Lu
- Web page: https://patentgrep.com/patent/US20100163784A1

## CPC

- C09K 3/1463: {Aqueous liquid suspensions}
- C09K: MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE

## Abstract

A polishing composition of the present invention at least comprises about 750 ppm to less than 5000 ppm by weight of abrasive particles, hydrogen peroxide, an accelerator, a dual-corrosion inhibitor and water, wherein the dual-corrosion inhibitor contains a first and a second corrosion inhibitor. The dual-corrosion inhibitor is applied to the planarization of metal layers so as to maintain a high removal rate of metal layers as well as suppress etching of the metal, thus capable of reducing polishing defects such as dishing, erosion and the like.

## Claims

### Claim 1

A polishing composition for planarizing a metal layer at least comprising:
about 750 ppm to less than 5000 ppm by weight of abrasive particles;
hydrogen peroxide;
an accelerator;
a dual-corrosion inhibitor containing a first and a second corrosion inhibitor; and
water.

### Claim 2 (depends on 1)

The polishing composition for planarizing a metal layer as claimed in claim 1, wherein the abrasive particles are present in 1000 ppm to less than 3000 ppm by weight.

### Claim 3 (depends on 1)

The polishing composition for planarizing a metal layer as claimed in claim 1, wherein the diameter of the abrasive particles is less than 90 nm.

### Claim 4 (depends on 1)

The polishing composition for planarizing a metal layer as claimed in claim 1, wherein the diameter of the abrasive particles is less than 50 nm.

### Claim 5 (depends on 1)

The polishing composition for planarizing a metal layer as claimed in claim 1, wherein the abrasive particle is selected from the group consisting of fumed silica, colloidal silica formed by hydrolysis of sodium silicate or potassium silicate, or hydrolysis and condensation of silane, precipitated or fumed aluminum oxide, precipitated or fumed titanium dioxide, polymeric materials, and hybrids of metal oxides and polymeric materials.

### Claim 6 (depends on 1)

The polishing composition for planarizing a metal layer as claimed in claim 1, wherein the abrasive particle is a colloidal silica.

### Claim 7 (depends on 1)

The polishing composition for planarizing a metal layer as claimed in claim 1, wherein the hydrogen peroxide is present in an amount of 0.25 to 5 wt % based on the total weight of the composition.

### Claim 8 (depends on 1)

The polishing composition for planarizing a metal layer as claimed in claim 1, wherein the accelerator is selected from the group consisting of citric acid, oxalic acid, tartaric acid, histidine, alanine, glycine and ammonium salts, sodium salts, potassium salts or lithium salts thereof.

### Claim 9 (depends on 1)

The polishing composition for planarizing a metal layer as claimed in claim 1, wherein the accelerator is present in an amount of 0.01 to 5 wt % based on the total weight of the composition.

### Claim 10 (depends on 1)

The polishing composition for planarizing a metal layer as claimed in claim 1, wherein the first corrosion inhibitor is selected from 1-H-benzotriazole, N-acyl sarcosine, alkyl sulfate or alkyl sulfonate.

### Claim 11 (depends on 1)

The polishing composition for planarizing a metal layer as claimed in claim 1, wherein the second corrosion inhibitor is selected from the group consisting of 1,2,3-triazole, 1,2,4-triazole, totyltriazole, 5-amino tertraazole, 3-amino-1,2,4-triazole, 4-amino-4H-1,2,4-triazole, 3-nitro-1,2,4-triazole, 3-mercapto-1,2,4-triazole, 1H-1,2,3-triazole-1-ethanol, benzimidazole, imidazole, pyrrole, pyrroline, oxazole, isoxazole, indazole or indolizine.

### Claim 12 (depends on 1)

The polishing composition for planarizing a metal layer as claimed in claim 1, wherein the dual-corrosion inhibitor is present in an amount of 0.001 to 1 wt % based on the total weight of the composition.