# US 2010/0163741 A1 · Radiation detector

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 2010/0163741 A1
- Document ID: US20100163741A1
- Status: Published application
- Kind: A1
- Application number: 12/601,256
- Filed: 2008-05-12
- Published: 2010-07-01
- Earliest claimed: 2007-05-21
- Inventors: Junichi Suzuki; Toshiyuki Sato; Hiroshi Koyama; Kenji Sato
- Web page: https://patentgrep.com/patent/US20100163741A1

## CPC

- G01T 1/241: {Electrode arrangements, e.g. continuous or parallel strips or the like}
- H04N 25/30: for transforming X-rays into image signals
- H10F 39/811: {Interconnections}
- H10F 77/206: {for devices having potential barriers}
- H10W 72/90: Bond pads, in general
- H10F 39/1892: {Direct radiation image sensors}
- H10W 72/536: {the connected ends being ball-shaped}
- H10W 72/5525: {comprising copper [Cu]}
- H10W 72/59: Bond pads specially adapted therefor
- G01T: MEASUREMENT OF NUCLEAR OR X-RADIATION (radiation analysis of materials, mass spectrometry G01N23/00; tubes for determining the presence, intensity, density or energy of radiation or particles H01J47/00)
- H04N: PICTORIAL COMMUNICATION, e.g. TELEVISION
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

In the radiation detector of this invention, the second common electrode is formed on the incidence surface of the seat so as to cover at least a portion of the seat and the second common electrode is connected to the first common electrode. Thus, the second common electrode is bent at the periphery of the semiconductor and the seat, and a bent portion thereof is formed sharp. The first common electrode formed along the incidence surface of the semiconductor is disposed under the sharp portion of the second electrode (i.e., opposite to the incidence surface). Consequently, the common electrode seen from a bottom (opposite to the incidence surface) has a uniform shape, which avoids occurrence of irregular concentration of the electric fields. As a result, dark current due to concentration of the electric fields may be suppressed.

## Claims

### Claim 1

A radiation detector for detecting radiation, comprising a radiation sensitive semiconductor for generating electric charges upon incidence of the radiation, a first common electrode for bias voltage application planarly formed so as to directly contact an incidence surface of the semiconductor, an insulating seat formed on an incidence surface of the first common electrode so as to cover a portion of the first common electrode, a second common electrode for bias voltage application formed on an incidence surface of the seat so as to cover at least a portion of the seat and connected to the first common electrode, and a lead wire for bias voltage supply connected to a portion of the incidence surface of the second electrode located on the seat, wherein the first common electrode has a dimension in a predetermined range including a radiation detection effective area.

### Claim 2 (depends on 1)

The radiation detector according to claim 1, wherein the second common electrode also has a dimension in a predetermined range including the radiation detection effective area.

### Claim 3 (depends on 1)

The radiation detector according to claim 1, wherein the second common electrode is disposed on a portion on the seat outside the radiation detection effective area.

### Claim 4 (depends on 1)

The radiation detector according to claim 1, wherein the second common electrode is formed so as to cover the entire seat.

### Claim 5 (depends on 4)

The radiation detector according to claim 4, wherein the second common electrode also has a dimension in a predetermined range including the radiation detection effective area.

### Claim 6 (depends on 4)

The radiation detector according to claim 4, wherein the second common electrode is disposed on a portion on the seat outside the radiation detection effective area.

### Claim 7 (depends on 1)

The radiation detector according to claim 1, comprising collecting electrodes for collecting the electric charges, wherein a carrier selective intermediate layer is formed between the semiconductor and the first common electrode, and a carrier selective intermediate layer is formed between the semiconductor and the collecting electrodes.

### Claim 8 (depends on 1)

The radiation detector according to claim 1, wherein the intermediate layer is formed only between the semiconductor and the first common electrode.

### Claim 9 (depends on 1)

The radiation detector according to claim 1, comprising collecting electrodes for collecting the electric charges, wherein the intermediate layer is formed only between the semiconductor and the collecting electrodes.

### Claim 10 (depends on 1)

The radiation detector according to claim 1, wherein the detector is a type of two-dimensional array having the collecting electrodes for collecting the electric charges formed in a two-dimensional matrix array.

### Claim 11 (depends on 1)

The radiation detector according to claim 1, wherein the detector is a type of one-dimensional array having the collecting electrodes for collecting the electric charges formed in a one-dimensional matrix array.

### Claim 12 (depends on 1)

The radiation detector according to claim 1, wherein the radiation is X-rays.