# US 2010/0163403 A1 · Plasma processing apparatus and operation method thereof > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2010/0163403 A1 - Document ID: US20100163403A1 - Status: Published application - Kind: A1 - Application number: 12/379,641 - Filed: 2009-02-26 - Published: 2010-07-01 - Earliest claimed: 2008-12-26 - Assignees: Hitachi High-Technologies Corporation - Inventors: Hiroho Kitada; Kazunori Nakamoto; Yosuke Sakai - Web page: https://patentgrep.com/patent/US20100163403A1 ## CPC - H10P 72/7612: {characterised by lifting arrangements, e.g. lift pins} - H01J 37/32082: {Radio frequency generated discharge (H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence)} - H01J 37/3244: {Gas supply means} - H01J 2237/20: Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) ## Abstract In a plasma processing apparatus including a processing chamber in a vacuum container to form plasma in the processing chamber in which pressure is reduced, a sample stage in lower part of inside of the processing chamber and having an upper surface on which a wafer to be processed by plasma is put, a plurality of pins in the sample stage to be moved in vertical direction so that the pins abut against rear side of the wafer to move the wafer up and down over the upper surface of the sample stage, and a plurality of openings formed in the upper surface of the sample stage so that the pins are moved in the openings, gas is fed from supply ports communicating with the openings into the processing chamber through the openings when the wafer is not put on the upper surface of the sample stage. ## Claims ### Claim 1 An operation method of a plasma processing apparatus including a processing chamber disposed in a vacuum container to form plasma in the processing chamber in which pressure is reduced, a sample stage disposed in lower part of inside of the processing chamber and having an upper surface on which a wafer to be processed by plasma is put, a plurality of pins disposed in the sample stage to be moved in vertical direction so that the plurality of pins abut against rear side of the wafer to move the wafer up and down over the upper surface of the sample stage, and a plurality of openings formed in the upper surface of the sample stage so that the plurality of pins are moved in the openings, wherein gas is fed from supply ports communicating with the inside of the openings into the processing chamber through the openings at at least one of the following times: when the wafer is not put on the upper surface of the sample stage; when the openings are exposed to the processing chamber; and when the wafer is delivered. ### Claim 2 (depends on 1) An operation method of a plasma processing apparatus according to claim 1, wherein the inside of the openings is pressurized to be higher than the inside of the processing chamber by introduction of gas. ### Claim 3 (depends on 1) An operation method of a plasma processing apparatus according to claim 1, wherein while plasma is formed in the processing chamber above the sample stage, the plurality of pins are driven and when the upper ends of the plurality of pins are moved above the upper surface of the sample stage, the gas is fed into the processing chamber. ### Claim 4 (depends on 1) An operation method of a plasma processing apparatus according to claim 1 wherein the plasma processing apparatus comprises bellows disposed under the openings to cover around lower part of the pin and be extended and contracted with vertical movement of the pin, space in the bellows is filled with the gas fed from the gas supply ports. ### Claim 5 (depends on 4) An operation method of a plasma processing apparatus according to claim 4, the plasma processing apparatus comprises two upper and lower pipe members disposed in the bellows to cover around lower part of the pin, the lower pipe member thereof being moved up and down with movement of the pin, at least part of the lower pipe member overlaps the upper pipe member through gap to cover the pin doubly when the pin is housed in the sample stage. ### Claim 6 (depends on 1) An operation method of a plasma processing apparatus according to claim 1, the plasma processing apparatus comprises sealing member to seal space in the bellows from outside airtightly, the space in the bellows is filled with the gas. ### Claim 7 A plasma processing apparatus including a processing chamber disposed in a vacuum container to form plasma in the processing chamber in which pressure is reduced, a sample stage disposed in lower part of inside of the processing chamber and having an upper surface on which a wafer to be processed by plasma is put, a plurality of pins disposed in the sample stage to be moved in vertical direction so that the plurality of pins abut against rear side of the wafer to move the wafer up and down over the upper surface of the sample stage, and a plurality of openings formed in the upper surface of the sample stage so that the plurality of pins are moved in the openings, comprising: gas supply ports communicating with inside of the openings to feed gas into the processing chamber through the openings at at least one of the following times: when the wafer is not put on the upper surface of the sample stage; when the openings are exposed to the processing chamber; and when the wafer is delivered. ### Claim 8 (depends on 7) A plasma processing apparatus according to claim 7, wherein the inside of the openings is pressurized to be higher than the inside of the processing chamber by introduction of gas. ### Claim 9 (depends on 7) A plasma processing apparatus according to claim 7, wherein while plasma is formed in the processing chamber above the sample stage, the plurality of pins are driven and when the upper ends of the plurality of pins are moved above the upper surface of the sample stage, the gas is fed into the processing chamber. ### Claim 10 (depends on 7) A plasma processing apparatus according to claim 7, comprising: bellows disposed under the openings to cover around lower part of the pin and be extended and contracted with vertical movement of the pin, space in the bellows being filled with the gas fed from the gas supply ports. ### Claim 11 (depends on 10) A plasma processing apparatus according to claim 10, comprising: two upper and lower pipe members disposed in the bellows to cover around lower parts of the pin, the lower pipe member thereof being moved up and down with movement of the pin, at least part of the lower pipe member overlapping the upper pipe member through gap to cover the pin doubly when the pin is housed in the sample stage. ### Claim 12 (depends on 7) A plasma processing apparatus according to claim 7, comprising: sealing member to seal space in the bellows from outside airtightly, the space in the bellows being filled with the gas.