Memory scrubbing in third dimension memory

A third dimension memory system, comprising:

• a reference memory element;
• a back-end-of-the-line (BEOL) memory element;
• and
• a front-end-of-the-line (FEOL) read and error detection circuit in electrical communication with the reference memory element and the BEOL memory element, the FEOL read and error detection circuit configured to sense a difference between a first resistance of the reference memory element and a second resistance of the BEOL memory element.

A read and error detection circuit for scrubbing memory, comprising:

• an operational amplifier that includes a first input, a second input, and an output;
• a back-end-of-the-line (BEOL) memory electrically coupled with the output of the operational amplifier;
• and
• a decoder electrically coupled with the BEOL memory.

A read and error detection circuit for scrubbing memory, comprising:

• a current mirror that includes a first input, a second input, and an output;
• a back-end-of-the-line (BEOL) memory electrically coupled with the output of the current mirror;
• and
• a decoder electrically coupled with the BEOL memory.

A method for memory scrubbing, comprising:

• reading a first resistance of a first reference memory element;
• reading a second resistance of a second reference memory element;
• reading a third resistance of a back-end-of-the-line (BEOL) memory element;
• comparing the third resistance with the first and second resistances, a resistive state being defined as a resistance between the first and second resistances;
• detecting a programming error associated with the third resistance if the third resistance is outside the resistive state;
• and
• correcting the third resistance of the BEOL memory element.

A method for scrubbing memory, comprising:

• reading a first resistance of a reference memory element;
• reading a second resistance of a back-end-of-the-line (BEOL) memory element;
• comparing the first resistance with the second resistance;
• and
• detecting a programming error associated with the second resistance based on the comparing.