Protecting integrity of data in multi-layered memory with data redundancy

An integrated circuit, comprising:

• a substrate including active circuitry fabricated on the substrate;
• a first memory block fabricated directly above the substrate and configured to store a datum, the first memory block including a memory cell configured to store the datum based on a conductivity profile of the memory cell;
• a second memory block fabricated directly above the substrate and configured to store a duplicate of the datum, the second memory block including another memory cell configured to store the datum based on a conductivity profile of the another memory cell;
• and
• a redundancy circuit included in the active circuitry and positioned below the first and second memory blocks, the redundancy circuit electrically coupled with the first and the second memory blocks, the redundancy circuit configured to duplicate the datum and to write the datum to both the first memory block and the second memory block.

A method for non-volatile data redundancy, comprising:

• writing data substantially simultaneously to at least two blocks of non-volatile memory in an array of resistance-based memory cells that are fabricated directly above a substrate including active circuitry fabricated on the substrate and configured to perform data operations on the array;
• storing the data in the at least two blocks of non-volatile memory;
• and
• comparing the data stored in the at least two blocks of non-volatile memory to detect a mismatch by reading the data from the at least two blocks of non-volatile memory substantially simultaneously.