A method for control of a computer memory, having a rank of plurality of an internal memory cell array memory devices (DRAMs) each having a plurality of semiconductor dynamic random access memory cells arranged in a matrix of rows and columns, and a local hub device, said method comprising issuing to a DRAM power control comprising a command decoder which provides a power-state program signal and a power-state reset signal, one of two commands, either normal mode command or a power-state programming mode command to control the power state of said DRAM, whereby during operation any failing and/or replaced memory device(s) of the memory cell array are placed in a low power state once they are replaced by a spare memory device.