Data storage system with non-volatile memory using both page write and block program and block erase
AssigneeUnity Semiconductor Corporation
InventorDavid Eggleston
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AssigneeUnity Semiconductor Corporation
InventorDavid Eggleston
Estimating the term…
An optimized data storage system including non-volatile re-writeable memory having both block program and erase and full or partial page write is disclosed. A memory controller of the system can use block data operations for large data transfers, and page data operations for small data transfers. Page data operations in the non-volatile re-writeable memory do not require block rewrites. One or more layers of the non-volatile re-writeable memory can be fabricated BEOL as two-terminal cross-point memory arrays that are fabricated over a substrate including active circuitry fabricated FEOL. Some or all of the active circuitry can be electrically coupled with the one or more layers of two-terminal cross-point memory arrays to perform data operations on the arrays, such as the block program and block erase and/or full or partial page writes. The arrays can include a plurality of two-terminal memory cells.
A data storage system, comprising:
A data storage system, comprising:
A data storage system, comprising:
A data storage system, comprising:
Dependencies are inferred from the claim text.