Method for producing polycrystalline silicon, and facility for producing polycrystalline silicon
AssigneeMitsubishi Materials Corporation
InventorMasayuki Tebakari
Life of this patent
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Abstract
A method for producing polycrystalline silicon, including: reacting trichlorosilane and hydrogen to produce silicon and a remainder including monosilanes (formula: SiHnCl4-n, wherein n is 0 to 4) containing silicon tetrachloride, and a polymer including at least trisilanes or tetrasilanes; and supplying the remainder and hydrogen to a conversion reactor and heating at a temperature within the range of 600 to 1,400° C. to convert silicon tetrachloride into trichlorosilane and the polymer into monosilanes.
Claims16
A method for producing polycrystalline silicon, comprising:
- reacting trichlorosilane and hydrogen to produce silicon and a remainder comprising monosilanes (formula:
- SiHnCl4-n, wherein n is 0 to 4) containing silicon tetrachloride, and a polymer including at least trisilanes or tetrasilanes;
- and
- supplying said remainder and hydrogen to a conversion reactor and heating at a temperature within the range of 600 to 1,400° C. to convert silicon tetrachloride into trichlorosilane and said polymer into monosilanes.
A facility for producing polycrystalline silicon, comprising:
- a production reactor for reacting trichlorosilane and hydrogen to produce silicon and a remainder comprising monosilanes (formula:
- SiHnCl4-n, wherein n is 0 to 4) containing silicon tetrachloride, and a polymer including at least trisilanes or tetrasilanes;
- and
- a conversion reactor to which said remainder and hydrogen are supplied and heated at a temperature within the range of 600 to 1,400° C. to convert silicon tetrachloride into trichlorosilane and said polymer into monosilanes.
Dependencies are inferred from the claim text.