Method of manufacturing semiconductor device, acid etching resistance material and copolymer
OwnerKoji ASAKAWA, Kenichi Ohashi +2inventors
InventorsKoji ASAKAWA, Kenichi Ohashi, Akira Fujimoto, Takashi Sasaki
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Abstract
Disclosed is an acid etching resistance material comprising a compound having a repeating unit represented by the following general formula (1): (in the general formula (1), R1 is a hydrogen atom or methyl group; R3 is a cyclic group selected from an alicyclic group and an aromatic group; R4 is a polar group; R2 is a group represented by the following general formula (2); and j is 0 or 1): (in the general formula (2), R5 is a hydrogen atom or methyl group).
Claims11
1-21. (canceled)
An acid etching resistance material comprising a compound having a repeating unit represented by the following general formula (1) and resistive to a solution containing hydrofluoric acid at a content of 40% or more:
- wherein in the general formula (1), R1 is a hydrogen atom or a methyl group;
- R3 is a cyclic group selected from the group consisting of an alicyclic group and an aromatic group, R4 is a polar group;
- R2 is a group represented by the following general formula (2);
- and J is 0 or 1:
- wherein in the general formula (2), R5 is a hydrogen atom or a methyl group.
Dependencies are inferred from the claim text.