Method for measuring temperature of semiconductor device and apparatus for measuring temperature of semiconductor device
OwnerKatsunori Asano, Yoshitaka Sugawarainventors
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Abstract
In the temperature measurement method for semiconductor devices, a junction temperature of a SiC GTO is determined by exploiting large temperature dependence of accumulation time ts as turn-OFF characteristic time of the SiC GTO that is a semiconductor switching element. The accumulation time ts is a time duration lasting from rise start time t1 of a gate turn-OFF current Ig until decay start time t2 of an anode current Ia. In this temperature measurement method, measured turn-OFF characteristic time is converted into a junction temperature of the SiC GTO based on relational characteristics between preliminarily measured accumulation time ts and junction temperatures.
Claims19
A temperature measurement method for semiconductor devices, comprising:
- a first step for, with a semiconductor switching element set to a specified temperature, performing a characteristic measurement for turning OFF the semiconductor switching element of the specified temperature from an ON state and measuring specified turn-OFF characteristic time at the turn-OFF, the characteristic measurement being done a plurality of times with temperature changed to preliminarily measure a relational characteristic between the turn-OFF characteristic time and temperatures of the semiconductor switching element;
- a second step for turning OFF the semiconductor switching element from an ON state and measuring the turn-OFF characteristic time at the turn-OFF;
- and
- a third step for converting the turn-OFF characteristic time measured in the second step into a temperature of the semiconductor switching element based on the relational characteristic preliminarily measured in the first step.
Dependencies are inferred from the claim text.