Nitride semiconductor light-emitting device
AssigneesSharp Kabushiki Kaisha, Sumitomo Electric Industries, Ltd.
InventorsTakeshi Kamikawa, Yoshika Kaneko, Kensaku Motoki
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Abstract
A nitride semiconductor light-emitting device wherein a substrate or nitride semiconductor layer has a defect concentration region and a low defect density region other than the defect concentration region. A portion including the defect concentration region of the nitride semiconductor layer or substrate has a trench region deeper than the low defect density region. Thus by digging the trench in the defect concentration region, the growth detection is uniformized, and the surface planarity is improved. The uniformity of the characteristic in the wafer surface leads to improvement of the yield.
Claims7
-7. (canceled)
A nitride semiconductor light-emitting device comprising a substrate and a nitride semiconductor layer laid on a top of the substrate,
- wherein the substrate or the nitride semiconductor layer has a defect-concentrated region and a low-defect region corresponding to a region other than the defect-concentrated region,
- wherein the defect-concentrated region or the low-defect region has a depression, and
- wherein there is provided an engraved region obtained by engraving a portion including the depression.
-18. (canceled)
Dependencies are inferred from the claim text.