Back to results
US 2010/0150197 A1Published application
Laser diode epitaxial wafer and method for producing same
AssigneeHitachi Cable, Ltd.
InventorKen Kurosu
Life of this patent
Estimating the term…
Abstract
A laser diode epitaxial wafer includes an n-type GaAs substrate, an n-type cladding layer formed on the n-type GaAs substrate, an active layer formed on the n-type cladding layer, and a p-type cladding layer formed on the active layer. The n-type cladding layer, the active layer, and the p-type cladding layer include an AlGaInP-based material. The p-type cladding layer has carbon as a p-type impurity. The p-type cladding layer has a carrier concentration between 8.0×1017 cm−3 and 1.5×1018 cm−3.
Claims5
A laser diode epitaxial wafer, comprising:
- an n-type GaAs substrate;
- an n-type cladding layer formed on the n-type GaAs substrate;
- an active layer formed on the n-type cladding layer;
- and
- a p-type cladding layer formed on the active layer,
- wherein the n-type cladding layer, the active layer, and the p-type cladding layer each comprise an AlGaInP-based material and have a double-hetero structure,
- wherein the p-type cladding layer comprises carbon as a p-type impurity, and
- wherein the p-type cladding layer has a carrier concentration between 8.0×1017 cm−3 and 1.5×1018 cm−3.
5 more elements
Dependencies are inferred from the claim text.