Loading patent…
AssigneeOpnext Japan, Inc.
InventorsTomonobu TSUCHIYA, Shigehisa TANAKA, Akihisa TERANO, Kouji NAKAHARA
Estimating the term…
In an InGaN-based nitride semiconductor optical device having a long wavelength (440 nm or more) equal to or more than that of blue, the increase of a wavelength is realized while suppressing In (Indium) segregation and deterioration of crystallinity. In the manufacture of an InGaN-based nitride semiconductor optical device having an InGaN-based quantum well active layer including an InGaN well layer and an InGaN barrier layer, a step of growing the InGaN barrier layer includes: a first step of adding hydrogen at 1% or more to a gas atmosphere composed of nitrogen and ammonia and growing a GaN layer in the gas atmosphere; and a second step of growing the InGaN barrier layer in a gas atmosphere composed of nitrogen and ammonia.
A manufacturing method of a nitride semiconductor optical device comprising steps of sequentially growing a first conductivity type cladding layer, a guide layer, an InGaN-based quantum well active layer, a second conductivity type cladding layer, and a second conductivity type contact layer on a semiconductor substrate, wherein
A manufacturing method of a nitride semiconductor optical device comprising steps of sequentially growing a first conductivity type cladding layer, an InGaN guide layer, an InGaN-based quantum well active layer, a second conductivity type cladding layer, and a second conductivity type contact layer on a semiconductor substrate, wherein
A nitride semiconductor optical device comprising a first conductivity type cladding layer, a guide layer, an InGaN-based quantum well active layer, a second conductivity type cladding layer, and a second conductivity type contact layer sequentially stacked on a semiconductor substrate, wherein
Dependencies are inferred from the claim text.