MQW Laser Structure Comprising Plural MQW Regions
AssigneeCorning Incorporated
InventorsRajaram Bhat, Jerome Napierala, Dmitry Sizov, Chung-En Zah
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Abstract
Multi-quantum well laser structures are provided comprising active and/or passive MQW regions. Each of the MQW regions comprises a plurality of quantum wells and intervening barrier layers. Adjacent MQW regions are separated by a spacer layer that is thicker than the intervening barrier layers. The bandgap of the quantum wells is lower than the bandgap of the intervening barrier layers and the spacer layer. The active region may comprise active and passive MQWs and be configured for electrically-pumped stimulated emission of photons or it may comprises active MQW regions configured for optically-pumped stimulated emission of photons.
Claims23
A multi-quantum well laser diode comprising a laser substrate, a semiconductor active region, a waveguide region, and a cladding region, wherein:
- the active region comprises at least one active MQW region and at least one passive MQW region;
- the active MQW region is configured for electrically-pumped stimulated emission of photons;
- the passive quantum well region is optically transparent at the lasing photon energy of the active MQW region;
- each of the MQW regions comprises a plurality of quantum wells and intervening barrier layers of barrier layer thickness a;
- adjacent MQW regions are separated by a spacer layer of spacer thickness b;
- the spacer thickness b is larger than the barrier layer thickness a;
- the bandgap of the quantum wells is lower than the bandgap of the intervening barrier layers and the spacer layer;
- and
- the respective active, waveguide, and cladding regions are formed as a multi-layered diode over the laser substrate such that the waveguide region guides the stimulated emission of photons from the active region, and the cladding region promotes propagation of the emitted photos in the waveguide region.
A multi-quantum well laser structure comprising a laser substrate, a semiconductor active region, a waveguide region, and a cladding region, wherein:
- the active region comprises one or more active MQW regions configured for optically-pumped stimulated emission of photons;
- each of the MQW regions comprises a plurality of quantum wells, which comprise a bandgap-reducing Group III nitride component, and intervening nitride barrier layers of barrier layer thickness a;
- adjacent MQW regions are separated by a nitride spacer layer of spacer thickness b;
- the spacer thickness b is larger than the barrier layer thickness a;
- the bandgap of the quantum wells is lower than the bandgap of the intervening nitride barrier layers and the nitride spacer layer;
- and
- the respective active, waveguide, and cladding regions form a multi-layered structure over the laser substrate such that the waveguide region guides the stimulated emission of photons from the active region, and the cladding region promotes propagation of the emitted photons in the waveguide region.
A multi-quantum well laser structure comprising a laser substrate, a semiconductor active region, a waveguide region, and a cladding region, wherein:
- the active region comprises a plurality of active MQW regions configured for optically-pumped stimulated emission of photons;
- each of the MQW regions comprises a plurality of quantum wells and intervening barrier layers of barrier layer thickness a;
- adjacent MQW regions are separated by a nitride spacer layer of spacer thickness b;
- the spacer thickness b is larger than the barrier layer thickness a and is between approximately 10 nm and approximately 150 nm;
- the barrier layer thickness a is between approximately 2 nm and approximately 30 nm;
- the bandgap of the quantum wells is lower than the bandgap of the intervening barrier layers and the nitride spacer layer;
- and
- the respective active, waveguide, and cladding regions form a multi-layered structure over the laser substrate such that the waveguide region guides the stimulated emission of photons from the active region, and the cladding region promotes propagation of the emitted photons in the waveguide region.
Dependencies are inferred from the claim text.