Table lookup voltage compensation for memory cells
AssigneeSpansion LLC
InventorsBoon-Aik ANG, Derric J.H. LEWIS
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Abstract
Systems and methods of regulating voltage at a memory cell are disclosed. An address for the memory cell is determined. Table lookups based on the address are performed. The table lookups yield voltage compensation parameters that can be used to set voltages on the terminals (e.g., source and drain) of the memory cell.
Claims20
1-20. (canceled)
A computer-implemented voltage compensation method, said method comprising:
- performing a first table lookup based on an address of a memory cell in an array of memory cells to select a first voltage compensation parameter;
- performing a second table lookup based on said address to select a second voltage compensation parameter;
- combining said first and second voltage compensation parameters and an uncompensated voltage value to determine a compensated voltage value;
- and
- setting a voltage at a terminal of said memory cell to said compensated voltage value.
A system comprising:
- a plurality of memory cells;
- and
- a microcontroller coupled to said memory cells and operable for accessing at least one lookup table comprising a plurality of voltage compensation parameters;
- wherein said microcontroller is operable for performing a first table lookup that yields a first voltage compensation value that is selected from said plurality of voltage compensation parameters based on an address associated with a memory cell of said plurality of memory cells, and wherein said microcontroller is also operable for performing a second table lookup that yields a second voltage compensation value that is selected from said plurality of voltage compensation parameters based on said address, wherein a compensated voltage value that is based on both said first voltage compensation value and said second voltage compensation value is applied to a terminal of said memory cell.
A computer-readable medium having stored thereon, computer-executable instructions that, responsive to execution by a computing device, cause the computing device to perform operations comprising:
- identifying an address in said array that is associated with said memory cell;
- selecting a first entry in a first lookup table, wherein said first entry corresponds to said address and wherein said first lookup table comprises first information useful for determining a first compensated voltage value for a drain of said memory cell;
- selecting a second entry in a second lookup table, wherein said second entry corresponds to said address and wherein said second lookup table comprises second information useful for determining a second compensated voltage value for a source of said memory cell;
- and
- setting a voltage at said drain to said first compensated voltage value and setting a voltage at said source to said second compensated voltage value.
Dependencies are inferred from the claim text.