Reduction of power consumption in a memory device during sleep mode of operation
AssigneeSTMicroelectronics Pvt. Ltd.
InventorAshish Kumar
Life of this patent
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Abstract
The present disclosure relates to a system comprising memory device with a power switch where the system comprises a first voltage controlled switch coupling positive power supply to positive supply terminal of memory device core; a second voltage controlled switch coupling negative power supply to negative supply terminal of the memory device core; a first reference voltage coupled to the substrate terminal of said first voltage controlled switch; and a second reference voltage coupled to the substrate terminal of said second voltage controlled switch. This helps maintain a sufficient RNM for efficient performance by the system.
Claims10
A system comprising a memory device with a bias generation unit, said system comprising:—
- a first voltage controlled switch coupling positive power supply to positive supply terminal of memory device core;
- a second voltage controlled switch coupling negative power supply to negative supply terminal of the memory device core;
- a first reference voltage coupled to the substrate terminal of said first voltage controlled switch;
- and
- a second reference voltage coupled to the substrate terminal of said second voltage controlled switch.
A memory device comprising a bias generation unit, said memory device comprising:—
- a first voltage controlled switch coupling positive power supply to positive supply terminal of memory device core;
- a second voltage controlled switch coupling negative power supply to negative supply terminal of the memory device core;
- a first reference voltage coupled to the substrate terminal of said first voltage controlled switch;
- and
- a second reference voltage coupled to the substrate terminal of said second voltage controlled switch.
A method of reducing power consumption in a memory device during sleep mode of operation comprising the steps of:—
- biasing substrate terminal of a first voltage controlled switch to a first reference voltage;
- and
- biasing substrate terminal of a second voltage controlled switch to a second reference voltage.
Dependencies are inferred from the claim text.