Flotox type eeprom
AssigneeRohm Co., Ltd.
InventorYushi Sekiguchi
Life of this patent
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Abstract
A FLOTOX EEPROM of the invention includes: a plurality of floating gates 11 arranged in array, each having a tunnel window 12 and allowing electron injection and extraction via the tunnel window; a plurality of select gates 13 provided in one-on-one correspondence to the plural floating gates 11; a control gate 16 shared by the plural floating gates 11; a source 17 shared by the plural floating gates 11; and a drain 18 shared by the plural floating gates 11. Therefore, the FLOTOX EEPROM does not encounter the decrease of junction breakdown voltage of a drain region, allowing the application of sufficiently high write voltage. Further, cell area can be reduced.
Claims12
A FLOTOX EEPROM comprising:
- a plurality of floating gates arranged in array, each having a tunnel window and allowing electron injection and extraction via the tunnel window;
- a plurality of select gates provided in one-on-one correspondence to the plural floating gates;
- a control gate shared by the plural floating gates;
- a source shared by the plural floating gates;
- and
- a drain shared by the plural floating gates.
Dependencies are inferred from the claim text.