Flash memory device and read method
AssigneeSamsung Electronics Co., Ltd.
InventorsHyung-gon KIM, Ki-hwan CHOI
Life of this patent
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Abstract
A flash memory device includes a word line decoder configured to receive a row address, and decode a selected word line and a neighboring non-selected word line corresponding to the row address during a read operation, and a word line driver configured to receive data identifying the selected word line and the neighboring non-selected word line from the word line decoder, and applying a read voltage to the selected word line, a first voltage to non-selected word lines other than the neighboring non-selected word line, and a second voltage to the neighboring non-selected word line.
Claims20
A flash memory device, comprising:
- a word line decoder configured to receive a row address, and decode a selected word line and a neighboring non-selected word line corresponding to the row address during a read operation;
- and
- a word line driver configured to receive data identifying the selected word line and the neighboring non-selected word line from the word line decoder, and applying a read voltage to the selected word line, a first voltage to non-selected word lines other than the neighboring non-selected word line, and a second voltage to the neighboring non-selected word line.
A flash memory device, comprising:
- a word line decoder configured to receive a row address, and decode a selected word line, a first neighboring non-selected word line, and a second neighboring non-selected word line corresponding to the row address during a read operation;
- and
- a word line driver configured to receive data identifying the selected word line, the first neighboring non-selected word line, and the second neighboring non-selected word line from the word line decoder, and apply a read voltage to the selected word line, a first voltage to non-selected word lines other than the first and second neighboring non-selected word lines, a second voltage to the first neighboring non-selected word line, and a third voltage to the second neighboring non-selected word line.
A memory system, comprising:
- a flash memory device and a memory controller configured to read data from the flash memory device, wherein the flash memory device comprises:
- a word line decoder configured to receive a row address, and decode a selected word line and a neighboring non-selected word line corresponding to the row address during a read operation;
- and
- a word line driver configured to receive data identifying the selected word line and the neighboring non-selected word line from the word line decoder, and applying a read voltage to the selected word line, a first voltage to non-selected word lines other than the neighboring non-selected word line, and a second voltage to the neighboring non-selected word line.
A method of reading data in the flash memory device, comprising:
- receiving the row address and decoding a selected word line and a neighboring non-selected word line;
- and
- in response to data identifying the selected word line and the neighboring non-selected word line, applying a read voltage to the selected word line, a first voltage to non-selected word lines other than the neighboring non-selected word line, and a second voltage to the neighboring non-selected word line.
Dependencies are inferred from the claim text.