Nonvolatile memory device and method for operating the same

A nonvolatile memory device, comprising:

• a memory cell array including multi-level cells configured to store n logic states, where n is equal to or greater than four;
• an address decoder configured to decode addresses selecting the multi-level cells, respectively;
• and
• a read voltage generation circuit configured to provide respective read voltages to the memory cell array,
• wherein the read voltage generation circuit selects at least one read voltage based on information set at a portion of the respective address decoded by the address decoder for a respective one of the multi-level cells, and multi-level data stored in the respective multi-level cells is determined based on the at least one selected read voltage.

A method for operating a nonvolatile memory device including multi-level cells configured to store at least n logic states, where n is equal to or greater than four, and the n logic states including a first set of logic states and a second set of logic states, the method comprising:

• setting information of a first level or a second level at a portion of a respective address selecting a respective one of the multi-level cells when the respective multi-level cell is set with a logic state from the first set or the second set of logic states, respectively;
• determining the level of the information set at the portion of the respective address during a respective data read operation;
• and
• reading multi-level data stored in the multi-level cell by applying at least one read voltage selected based on the level of the information set at the respective portion of the address of the respective one of the multi-level cells.