Reading method of nonvolatile semiconductor memory device
AssigneeSamsung Electronics Co., Ltd.
InventorTsuyoshi Tanaka
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Abstract
Reading methods of a nonvolatile semiconductor memory device are described herein. Methods may include supplying, to a word line, one of a voltage corresponding to a highest reading level or a voltage having a level higher than a first reading level of a read operation to be performed on the word line, and subsequently supplying a voltage of the first reading level to the word line and performing the read operation.
Claims19
A reading method of a nonvolatile semiconductor memory device, the method comprising:
- supplying, to a word line, one of a voltage corresponding to a highest reading level or a voltage having a level higher than a first reading level of a read operation to be performed on the word line;
- and
- subsequently supplying a voltage of the first reading level to the word line and performing the read operation.
A reading method of a nonvolatile semiconductor memory device performing a read operation by supplying a voltage of a predetermined level to a word line, the method comprising:
- starting up a word line voltage by supplying a voltage having a voltage level higher than the predetermined level to the word line;
- supplying the voltage of the predetermined level to the word line;
- and
- setting the word line voltage of the predetermined level and performing the read operation.
A reading method of a nonvolatile semiconductor memory device performing a read operation by sequentially supplying voltages having a plurality of voltage levels to a word line, the method comprising:
- performing a read operation by supplying a voltage having a highest voltage level to the word line;
- and
- performing a read operation by supplying a voltage, of which a level is lower by one level than the highest level, to the word line after a voltage level of the word line voltage is lowered through discharging.
Dependencies are inferred from the claim text.