Multi-level cell flash memory device and read method
AssigneeSamsung Electronics Co., Ltd.
InventorsMoo-sung KIM, Pan-suk KWAK
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Abstract
A method of reading data of a multi-level cell (MLC) flash memory device is disclosed. The method includes reading a least significant bit (LSB) and a most significant bit (MSB) of the data programmed to a plurality of memory cells. Reading each of the LSB and MSB includes; reading a MSB flag indicating whether or not the MSB for memory cells in a page of memory cells has been programmed, performing a first read with respect to a plurality of first bit lines, setting a target voltage in view of the read value of the MSB flag, applying the target voltage to a plurality of second bit lines, and performing a second read with respect to the plurality of second bit lines.
Claims18
A method of reading data of a multi-level cell (MLC) flash memory device, the method comprising:
- reading a least significant bit (LSB) and a most significant bit (MSB) of the data programmed to a plurality of memory cells;
- wherein reading each of the LSB and MSB comprises:
- reading a MSB flag indicating whether or not the MSB for memory cells in a page of memory cells has been programmed;
- performing a first read with respect to a plurality of first bit lines;
- setting a target voltage in view of the read value of the MSB flag;
- applying the target voltage to a plurality of second bit lines;
- and
- performing a second read with respect to the plurality of second bit lines.
A memory system device comprising:
- a multi-level cell (MLC) flash memory device, and a memory controller configured to read data from the MLC flash memory device, wherein the MLC flash memory comprises a memory cell array implemented with a plurality of N-bit memory cells, where N is a positive integer, and a controller, wherein the controller is configured to read both a least significant bit (LSB) and a most significant bit (MSB) of the data programmed to a plurality of N-bit memory cells, such that reading each of the LSB and MSB comprises:
- reading a MSB flag indicating whether or not the MSB for memory cells in a page of the memory cells has been programmed, and then;
- performing a first read with respect to a plurality of first bit lines;
- setting a target voltage in view of the read value of the MSB flag;
- applying the target voltage to a plurality of second bit lines;
- and
- performing a second read with respect to the plurality of second bit lines.
Dependencies are inferred from the claim text.