Access method of non-volatile memory device
AssigneeSamsung Electronics Co., Ltd.
InventorsHan Woong Yoo, KyoungLae Cho, Seung-Hwan Song, Heeseok Eun, Hong Rak Son
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Abstract
Disclosed is an access method of a non-volatile memory device which comprises detecting a threshold voltage variation of a first memory cell, the a threshold voltage variation of the first memory cell being capable of physically affecting a second memory cell; and assigning the second memory cell to a selected sub-distribution from among a plurality of sub-distributions according to a distance of the threshold voltage variation of the first memory cell, the plurality of sub-distributions corresponding to a target distribution of the second memory cell.
Claims18
An access method of a non-volatile memory device comprising:
- detecting a threshold voltage variation of a first memory cell, the threshold voltage variation of the first memory cell being capable of physically affecting a second memory cell;
- and
- assigning the second memory cell to a sub-distribution selected from among a plurality of sub-distributions according to a distance of the threshold voltage variation of the first memory cell, the plurality of sub-distributions corresponding to a target distribution of the second memory cell.
Dependencies are inferred from the claim text.