Nonvolatile semiconductor memory device

A nonvolatile semiconductor memory device comprising:

• a nonvolatile memory which includes a block having a plurality of memory cell groups, each of the memory cell groups being electrically connected to a plurality of bit lines and electrically connected to a common word line, each memory cell being recordable of a plurality of bits;
• a first register which stores information obtained by correcting first data to be written to a first word line;
• and
• a control circuit which performs writing separately for even bit lines and odd bit lines, sets a set potential in the first register, and writes the bits to a write target first memory cell at a time using the information in the first register, the set potential being obtained by subtracting, from a target potential to be finally set in the first memory cell, a potential increase which is generated by setting a potential in an unwritten second memory cell adjacent to the first memory cell.