Phase change memory device

A phase change memory device for providing a phase change memory cell with a programming current through the control of first and second control voltages corresponding to input data, the phase change memory device comprising:

• a first common programming current adjusting sector including a first current driving unit for receiving a supply voltage and configured to provide a first operating current, thereby generating the first control voltage;
• a second common programming current adjusting sector including a second current driving unit for receiving the supply voltage and configured to provide a second operating current, thereby generating the second control voltage;
• a plurality of first programming current driving sectors each of which is configured to supply a corresponding phase change memory cell with a programming current corresponding to the first control voltage;
• and
• a plurality of second programming current driving sectors each of which is configured to supply the corresponding phase change memory cell with a programming current corresponding to the second control voltage.

A phase change memory device, comprising:

• a plurality of phase change memory cells;
• a plurality of programming current driving blocks, each of which is configured to provide a programming current corresponding to input data;
• a programming current adjusting block commonly connected to the plurality of programming current driving blocks and configured to generate a control voltage to adjust the programming current;
• and
• a plurality of transmission blocks, each of which is coupled between a corresponding one of the programming current driving blocks and a corresponding one of the phase change memory cells, and is configured to transmit the programming current to the corresponding phase change memory in response to a control signal.