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US 2010/0149859 A1Published application
Phase-change memory device
AssigneeHynix Semiconductor Inc.
InventorKyoung-Wook PARK
Life of this patent
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Abstract
A phase-change memory device includes a data write control unit configured to generate write control signals according to a data combination of a plurality of input data and output write control codes with a code update period controlled according to an activation period of one of the write control signal, and a data write unit configured to output a program current in response to the write control signals and control a level of the program current according to a code combination of the write control codes.
Claims14
A phase-change memory device comprising:
- a data write control unit configured to generate write control signals according to a data combination of a plurality of input data and output write control codes with a code update period controlled according to an activation period of one of the write control signal;
- and
- a data write unit configured to output a program current in response to the write control signals and control a level of the program current according to a code combination of the write control codes.
Dependencies are inferred from the claim text.