Semiconductor device storage cell structure, method of operation, and method of manufacture
AssigneeSuVolta, Inc.
InventorMadhu B. Vora
Life of this patent
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Abstract
A method of fabricating an integrated circuit device storage cell may include forming a channel region comprising a semiconductor material doped to a first conductivity type; forming a store gate structure comprising a semiconductor material doped to a second conductivity type in contact with the channel region; and forming a control gate terminal from at least a portion of a semiconductor layer deposited on a substrate surface in contact with the channel region, the portion of the semiconductor layer being doped to the second conductivity type.
Claims17
A semiconductor device, comprising:
- at least one storage cell, comprising
- a store gate structure formed from a semiconductor material doped to a first conductivity type and in contact with a channel region comprising a semiconductor material doped to a second conductivity type;
- at least a first source/drain region and a second source/drain region separated from one another by the channel region;
- and
- a control gate structure, comprising a semiconductor layer doped to the first conductivity type and formed over a substrate surface, the control gate structure being in contact with the channel region;
- wherein
- the store gate is formed on the substrate surface.
A semiconductor device, comprising:
- at least one storage cell, comprising
- a store gate structure formed from a semiconductor material doped to a first conductivity type and in contact with a channel region comprising a semiconductor material doped to a second conductivity type;
- at least a first source/drain region and a second source/drain region separated from one another by the channel region;
- and
- a control gate structure, comprising a semiconductor layer doped to the first conductivity type and formed over a substrate surface, the control gate structure being in contact with the channel region;
- wherein
- the control gate structure is formed adjacent to the store gate structure in a direction parallel to the substrate surface.
An integrated circuit operating method, comprising the steps of:
- storing a first predetermined value in at least a first storage cell by applying a first gate voltage to a gate terminal of the first storage cell and a first source voltage to a source of the storage cell, the gate terminal comprising a semiconductor material doped to a first conductivity type and formed on a substrate surface, the first gate and source voltages creating a punchthrough voltage through a semiconductor region of a second conductivity type that charges a store gate comprising a semiconductor material doped to the first conductivity type;
- and
- determining the data value stored in the storage cell according to the magnitude of a current flowing through a channel region of the first storage cell, the channel region comprising a semiconductor material doped to the second conductivity type that is adjacent to the store gate.
A method of fabricating an integrated circuit device storage cell, comprising:
- forming a channel region comprising a semiconductor material doped to a first conductivity type;
- forming a store gate structure comprising a semiconductor material doped to a second conductivity type in contact with the channel region;
- and
- forming a control gate terminal from at least a portion of a semiconductor layer deposited on a substrate surface in contact with the channel region, the portion of the semiconductor layer being doped to the second conductivity type.
Dependencies are inferred from the claim text.