Back to results
US 2010/0149520 A1Published application
Device and method for measuring thickness of paint film in non-contacting manner
AssigneeAisin Seiki Kabushiki Kaisha
InventorsHideyuki OHTAKE, Yuki ICHIKAWA
Life of this patent
Estimating the term…
Abstract
A non-contacting type paint film thickness measuring device includes a generating portion for generating a terahertz pulse light, a detecting portion for detecting the terahertz pulse light, a measured wave form in time-series obtaining portion for obtaining a measured wave form indicating an electric field intensity of a terahertz echo pulse light, and an intrinsic wave form in time-series obtaining portion, having an intrinsic electric field spectrum calculating portion and an intrinsic wave form in time-series calculating portion, for calculating an intrinsic wave form in time-series of an object.
Claims4
A non-contacting type paint film thickness measuring device comprising:
- generating means for generating a terahertz pulse light;
- detecting means for detecting the terahertz pulse light generated by the generating means, passing through a predetermined optical path, and reaching the detecting means;
- measured wave form in time-series obtaining means for obtaining a measured wave form in time-series indicating an electric field intensity in time series of a terahertz echo pulse light that is the terahertz pulse light emitted to an object whose paint film thickness is measured, reflected at the object and detected by the detecting means, the object being positioned on the predetermined optical path;
- intrinsic wave form in time-series obtaining means for calculating an intrinsic wave form in time-series of the object on the basis of a standard wave form in time-series and the measured wave form in time-series, the standard wave form in time-series indicating an electric field intensity in time-series of a reflected light that is the terahertz pulse light generated at the generating means, emitted to a sputtering mirror, reflected at the sputtering mirror, and detected by the detecting means, the sputtering mirror being positioned on the predetermined optical path instead of the object;
- and
- the intrinsic wave form in time-series obtaining means including an intrinsic electric field spectrum calculating means and an intrinsic wave form in time-series calculating means, the intrinsic electric field spectrum calculating means calculating an intrinsic electric field spectrum by multiplying a measured electric field spectrum by a standard electric field spectrum and an Wiener inverse filter, the measured electric field spectrum obtained by applying a Fourier transformation to the measured wave form in time-series, the standard electric field spectrum obtained by applying a Fourier transformation to the standard wave form in time-series and the Wiener inverse filter expressed with a constant number, and the intrinsic wave form in time-series calculating means calculating the intrinsic wave form in time-series by applying an inverse Fourier transformation to the intrinsic electric field spectrum with increasing or decreasing the constant number.
3 more elements
A non-contacting type paint film thickness measuring method;
- using generating means for generating a terahertz pulse light and detecting means for detecting the terahertz pulse light generated by the generating means, passing through a predetermined optical path, and reaching the detecting means, comprising:
- a measured wave form in time-series obtaining step for obtaining a measured wave form in time-series indicating an electric field intensity in time series of a terahertz echo pulse light that is the terahertz pulse light emitted to an object whose paint film thickness is measured, reflected at the object and detected by the detecting means, the object being positioned on the predetermined optical path;
- and
- an intrinsic wave form in time-series obtaining step for calculating an intrinsic wave form in time-series of the object on the basis of a standard wave form in time-series and the measured wave form in time-series, the standard wave form in time-series indicating an electric field intensity in time-series of a reflected light that is the terahertz pulse light generated at the generating means, emitted to a sputtering mirror, reflected at the sputtering mirror, and detected by the detecting means, the sputtering mirror being positioned on the predetermined optical path instead of the object, wherein the intrinsic wave form in time-series obtaining step including an intrinsic electric field spectrum calculating step and an intrinsic wave form in time-series calculating step, the intrinsic electric field spectrum calculating step calculating an intrinsic electric field spectrum by multiplying a measured electric field spectrum by a standard electric field spectrum and an Wiener inverse filter, the measured electric field spectrum obtained by applying a Fourier transformation to the measured wave form in time-series, the standard electric field spectrum obtained by applying a Fourier transformation to the standard wave form in time-series and the Wiener inverse filter expressed with a constant number, and the intrinsic wave form in time-series calculating step calculating the intrinsic wave form in time-series by applying an inverse Fourier transformation to the intrinsic electric field spectrum with increasing or decreasing the constant number.
1 more element
Dependencies are inferred from the claim text.