EUV Mask Inspection System

A method for inspecting a mask for defects, comprising:

• illuminating an extreme ultraviolet (EUV) radiation beam onto a target portion of the mask;
• receiving at least a portion of a reflected EUV radiation beam from the target portion of the mask;
• and
• detecting an aerial image corresponding to the portion of the reflected EUV radiation beam.

A lithography system, comprising:

• a first illumination system configured to condition a first extreme ultraviolet (EUV) radiation beam;
• a support constructed to support a first patterning device, the first patterning device configured to impart the first EUV radiation beam with a pattern in its cross-section to form a patterned radiation beam;
• a substrate table constructed to hold a substrate;
• a projection system configured to focus the patterned radiation beam onto the substrate;
• and
• a mask inspection system comprising,
• a second illumination system configured to illuminate a second EUV radiation beam onto a target portion of a second patterning device,
• an optical system configured to receive at least a portion of a reflected EUV radiation beam from the target portion of the second patterning device, and
• an image sensor configured to detect an aerial image corresponding to the portion of the reflected EUV radiation beam.

A lithography system, comprising:

• an illumination system configured to condition a first extreme ultraviolet (EUV) radiation beam and to illuminate a second EUV radiation beam onto a target portion of a first patterning device;
• a support constructed to support a second patterning device, the second patterning device configured to impart the first EUV radiation beam with a pattern in its cross-section to form a patterned radiation beam;
• a substrate table constructed to hold a substrate;
• a projection system configured to focus the patterned radiation beam onto the substrate;
• and
• a mask inspection system comprising,
• an optical system configured to receive at least a portion of a reflected EUV radiation beam from the target portion of the first patterning device, and
• an image sensor configured to detect an aerial image corresponding to the portion of the reflected EUV radiation beam.