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US 2010/0149266 A1Published application
Mems Integrated Circuit With Polymerized Siloxane Layer
AssigneeSilverbrook Research Pty Ltd
InventorsGregory John McAvoy, Kia Silverbrook, Emma Rose Kerr, Misty Bagnat, Vincent Patrick Lawlor
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Abstract
A MEMS integrated circuit comprises: a silicon substrate having a passivated CMOS layer, a MEMS layer disposed on the passivated CMOS layer, and a polymer layer disposed on the MEMS layer. The CMOS layer comprises drive circuitry for actuating actuator devices in the MEMS layer and the polymer layer comprises a polymerized siloxane.
Claims18
A MEMS integrated circuit comprising:
- a silicon substrate having a passivated CMOS layer;
- a MEMS layer disposed on said passivated CMOS layer, wherein said CMOS layer comprises drive circuitry for actuating actuator devices in said MEMS layer;
- and
- a polymer layer disposed on said MEMS layer, said polymer layer comprising a polymeric material selected from the group consisting of:
- polymerized siloxanes.
2 more elements
Dependencies are inferred from the claim text.