Complementary-conducting-strip Coupled-line
AssigneesNational Taiwan University, CMSC, Inc.
InventorsChing-Kuang Tzuang, Meng-Ju Chiang, Shian-Shun Wu
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Abstract
This invention discloses a complementary-conducting-strip coupled-line (CCS CL). The CCS CL includes a substrate, m layers of mesh ground planes interlacing with m−1 layer(s) of first inter-media-dielectric (IMD) to form a stack structure on the substrate, a second IMD layer being on the stack structure, and n metal lines being on the second IMD layer and being edge-coupled with each other. Wherein, the m−1 first IMD layer(s) has(have) a plurality of vias to connect matching mesh ground planes, therein, m≧2 and m is a nature number, n≧2 and n is a nature number.
Claims42
A complementary-conducting-strip coupled-line, comprising:
- a substrate;
- m layers of mesh ground planes, interlacing with m−1 layer(s) of first inter-media-dielectric to form a stack structure on said substrate, said m−1 first inter-media-dielectric layer(s) having a plurality of vias to connect matching mesh ground planes, wherein m is a nature number and m≧2;
- a second inter-media-dielectric layer, being on said stack structure;
- and
- n metal lines, being on said second inter-media-dielectric layer and being edge-coupled with each other, wherein n is a nature number and n≧2.
A complementary-conducting-strip coupled-line, comprising:
- a substrate;
- a mesh ground plane, being on said substrate;
- an inter-media-dielectric layer, being on said mesh ground plane;
- and
- n metal lines, being on said inter-media-dielectric layer and being edge-coupled with each other, wherein n is a nature number and n≧2.
A complementary-conducting-strip coupled-line, comprising:
- a substrate;
- m layers of mesh ground planes, interlacing with m−1 layer(s) of first inter-media-dielectric to form a stack structure on said substrate, said m−1 first inter-media-dielectric layer(s) having a plurality of vias to connect matching mesh ground planes, wherein m is a nature number and m≧2;
- a second inter-media-dielectric layer, being on said stack structure;
- and
- n metal lines, being above said second inter-media-dielectric layer and being broadside-coupled with each other, said n metal lines interlacing with n−1 third inter-media-dielectric layer(s), wherein n is a nature number and n≧2.
A complementary-conducting-strip coupled-line, comprising:
- a substrate;
- a mesh ground plane, being on said substrate;
- a first inter-media-dielectric layer, being on said mesh ground plane;
- and
- n metal lines, being above said first inter-media-dielectric layer and being broadside-coupled with each other, said n metal lines interlacing with n−1 second inter-media-dielectric layer(s), wherein n is a nature number and n≧2.
A complementary-conducting-strip coupled-line, comprising:
- a substrate;
- m layers of mesh ground planes, interlacing with m−1 layer(s) of first inter-media-dielectric to form a stack structure on said substrate, said m−1 first inter-media-dielectric layer(s) having a plurality of vias to connect matching mesh ground planes, wherein m is a nature number and m≧2;
- a second inter-media-dielectric layer, being on said stack structure;
- and
- y layers of metal line, interlacing with y−1 third inter-media-dielectric layer(s) and being above said second inter-media-dielectric layer, said y metal line layers individually at least comprising n metal lines being edge-coupled with each other, wherein, n, y are nature numbers and n≧2, y≧2.
A complementary-conducting-strip coupled-line, comprising:
- a substrate;
- a mesh ground plane, being on said substrate;
- a first inter-media-dielectric layer, being on said mesh ground plane;
- and
- y layers of metal line, interlacing with y−1 second inter-media-dielectric layer(s) and being above said first inter-media-dielectric layer, said y metal line layers individually at least comprising n metal lines being edge-couple with each other, wherein, n, y are nature numbers and n≧2, y≧2.
Dependencies are inferred from the claim text.