Semiconductor element and electrical apparatus

A semiconductor element comprising

• a plurality of field effect transistors each including:
• a semiconductor layer made of a wide band-gap semiconductor;
• a first source/drain region which is a first conductivity type and formed in said semiconductor layer so as to include an upper surface of said semiconductor layer;
• a second conductivity type region which is a second conductivity type and formed in said semiconductor layer so as to include the upper surface and said first source/drain region;
• a drift region which is a first conductivity type and formed in said semiconductor layer so as to include the upper surface and said second conductivity type region;
• a first source/drain electrode which is formed so as to contact at least the upper surface of said first source/drain region;
• a gate electrode which is formed so as to face at least the upper surface of said second conductivity type region with a gate insulating film provided between said gate electrode and said second conductivity type region;
• and
• a second source/drain electrode which is connected to said drift region in an ohmic manner, and
• a schottky electrode which is disposed on the upper surface of said drift region so as to form a schottky junction with the upper surface of said drift region,
• wherein:
• said semiconductor layer is divided into a plurality of cells by a virtual border line in plan view;
• said drift region and said second source/drain electrode are formed so as to extend over the plurality of cells;
• the plurality of cells are constituted of a transistor cell in which said field effect transistor is formed and a diode cell in which said schottky electrode is formed;
• the plurality of transistor cells are formed adjacent to each other in a transistor forming region;
• and
• a diode forming region where the diode cells, the number of which is one or more, are formed is formed so as to surround the transistor forming region.