Semiconductor device
AssigneeInfineon Technologies AG
InventorsJoachim Mahler, Edward Fuergut, Manfred Mengel, Ivan Nikitin
Life of this patent
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Abstract
A semiconductor device is disclosed. One aspect provides a semiconductor device that includes a semiconductor chip including a first face and a second face opposite the first face, an encapsulant including inorganic particles encapsulating the semiconductor chip, a first metal layer attached to the first face of the semiconductor chip, a second metal layer attached the second face of the semiconductor chip, and electrically conducting material configured to connect the first metal layer with the second metal layer.
Claims29
A semiconductor device, comprising:
- a semiconductor chip comprising a first face and a second face opposite the first face;
- an encapsulant comprising inorganic particles encapsulating the semiconductor chip;
- a first metal layer attached to the first face of the semiconductor chip;
- a second metal layer attached to the second face of the semiconductor chip;
- and
- electrically conducting material configured to connect the first metal layer with the second metal layer.
A method of manufacturing a semiconductor device, comprising:
- placing a plurality of semiconductor chips over a carrier;
- applying an encapsulant material over the carrier and at least one of the semiconductor chips, the encapsulant material being one of a powder and a liquid;
- and
- heating the encapsulant material until the encapsulant material rigidly surrounds the plurality of semiconductor chips.
A semiconductor device, comprising:
- a semiconductor chip comprising an active surface opposite a back surface;
- an encapsulant comprising sintered particles encapsulating sides of the semiconductor chip;
- a first metal layer attached to a first contact on the active surface of the semiconductor chip;
- a separate second metal layer attached to a second contact on the active surface of the semiconductor chip;
- and
- electrically conducting material extending between the first metal layer and the back surface and between the separate second metal layer and the back surface.
A method of manufacturing a semiconductor structure, comprising:
- placing a plurality of semiconductor chips on a carrier;
- applying an encapsulant material over the carrier and at least one of the semiconductor chips;
- heating at least the encapsulant material to harden the encapsulant material;
- sawing through the encapsulant to form streets segregating the plurality of semiconductor chips;
- and
- depositing electrically conducting material at least along the streets.
Dependencies are inferred from the claim text.