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US 2010/0148370 A1Published application
Through-silicon via and method for forming the same
AssigneeHynix Semiconductor Inc.
InventorKwon Whan HAN
Life of this patent
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Abstract
A method for forming a through-silicon via includes the steps of defining a groove in each chip of a wafer which has a plurality of semiconductor chips; applying liquid polymer on the wafer to fill the groove; forming an insulation layer on a sidewall of the groove through patterning the polymer; forming a metal layer to fill the groove which is formed with the insulation layer on the sidewall thereof; and back-grinding a backside of the wafer to expose the metal layer filled in the groove.
Claims1
A semiconductor wafer having a through-silicon via, said semiconductor wafer comprising:
- a groove formed into a wafer;
- an insulation layer formed on a surface of the groove;
- and a metal filled in the groove, wherein the insulation layer is comprised of a mechanically compliant polymer.
Dependencies are inferred from the claim text.