Grain growth promotion layer for semiconductor interconnect structures
AssigneeInternational Business Machines Corporation
InventorsChih-Chao Yang, Shom Ponoth
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Abstract
An interconnect structure of the single or dual damascene type and a method of forming the same, which substantially reduces the electromigration problem that is exhibited by prior art interconnect structures, are provided. In accordance with the present invention, a grain growth promotion layer, which promotes the formation of a conductive region within the interconnect structure that has a bamboo microstructure and an average grain size of larger than 0.05 microns is utilized. The inventive structure has improved performance and reliability.
Claims20
An interconnect structure comprising:
- a dielectric material including at least one opening therein;
- a diffusion barrier located within said at least one opening;
- a grain growth promotion layer located on said diffusion barrier;
- and
- an interconnect conductive material located within the at least one opening, said interconnect conductive material having a bamboo microstructure and an average grain size of larger than 0.05 microns.
An interconnect structure comprising:
- a dielectric material including at least one opening therein;
- a diffusion barrier located within said at least one opening;
- a grain growth promotion layer located on said diffusion barrier;
- and
- a Cu interconnect metal located within the at least one opening, said Cu interconnect metal having a bamboo microstructure and an average grain size of larger than 0.05 microns.
Dependencies are inferred from the claim text.