Double-Sided Semiconductor Device and Method of Forming Top-Side and Bottom-Side Interconnect Structures

A method of manufacturing a semiconductor device, comprising:

• providing a semiconductor wafer;
• forming a first active device on a first side of the semiconductor wafer;
• forming a first interconnect structure over the first side of the semiconductor wafer, the first interconnect structure being electrically connected to the first active device;
• mounting a temporary carrier to the first interconnect structure;
• forming a second active device on a second side of the semiconductor wafer opposite the first side of the semiconductor wafer;
• forming a second interconnect structure over the second side of the semiconductor wafer, the second interconnect structure being electrically connected to the second active device;
• and
• removing the temporary carrier.

A method of manufacturing a semiconductor device, comprising:

• providing a semiconductor wafer;
• forming a first active device on a first side of the semiconductor wafer;
• forming a first interconnect structure over the first side of the semiconductor wafer, the first interconnect structure being electrically connected to the first active device;
• forming a second active device on a second side of the semiconductor wafer opposite the first side of the semiconductor wafer;
• and
• forming a second interconnect structure over the second side of the semiconductor wafer, the second interconnect structure being electrically connected to the second active device.

A semiconductor device, comprising:

• a first substrate;
• a first active device formed on a first side of the first substrate;
• a first interconnect structure formed over the first side of the first substrate, the first interconnect structure being electrically connected to the first active device;
• a second active device formed on a second side of the first substrate opposite the first side of the first substrate;
• and
• a second interconnect structure formed over the second side of the first substrate, the second interconnect structure being electrically connected to the second active device.